An embodiment of the present invention provides an
ultraviolet light-emitting
diode epitaxial structure, an
ultraviolet light-emitting
diode, and an electronic device. The epitaxial structure includes a substrate, a first AlN layer, a multi-period composite regulation layer, an n-type Al x Ga 1‑x N
contact layer, a multi-
quantum well light-emitting layer, a p-type Al y Ga 1‑y N
blocking layer, and a p-type GaN layer, which are grown in sequence from bottom to top. The multi-period composite regulation layer includes multiple periodic structures grown in sequence from bottom to top. Each periodic structure includes a second AlN layer, an Al m Ga 1‑m N layer, an Al n Ga 1‑n N layer, and an Al k Ga 1‑k N layer. Among them, the Al components in the n-type Al x Ga 1‑x N
contact layer, the Al m Ga 1‑m N layer, the Al n Ga 1‑n N layer, and the Al k Ga 1‑k N layer are different. By growing a multi-period composite regulation layer between the first AlN layer and the n-type Al x Ga 1‑x N
contact layer, the present invention reduces the
lattice mismatch between the first AlN layer and the n-type Al x Ga 1‑x N contact layer, regulates the warping of the
ultraviolet light-emitting
diode epitaxial
wafer, filters the dislocations extending upward from the first AlN layer, reduces the compressive stress of the n-type Al x Ga 1‑x N contact layer, improves the
crystal quality, and enhances the light-emitting efficiency of the device.