The embodiment of the invention provides an ultraviolet light-emitting diode epitaxial structure, an ultraviolet light-emitting diode and electronic equipment. The epitaxial structure comprises a substrate, a first AlN layer, a multi-cycle composite regulation and control layer, an n-type Al < x > Ga < 1-x > N contact layer, a multi-quantum well light-emitting layer, a p-type Al < y > Ga < 1-y > N barrier layer and a p-type GaN layer which are sequentially grown from bottom to top, and the multi-cycle composite regulation and control layer comprises a plurality of cycle structures which are sequentially grown from bottom to top, each periodic structure comprises a second AlN layer, an Al < m > Ga < 1-m > N layer, an Al < n > Ga < 1-n > N layer and an Al < k > Ga < 1-k > N layer which are sequentially grown from bottom to top, and Al components in the n-type Al < x > Ga < 1-x > N contact layer, the Al < m > Ga < 1-m > N layer, the Al < n > Ga < 1-n > N layer and the Al < k > Ga < 1-k > N layer are different. According to the ultraviolet light-emitting diode epitaxial wafer, the multi-cycle composite regulation and control layer is grown between the first AlN layer and the n-type AlxGa1-xN contact layer, so that lattice mismatch between the first AlN layer and the n-type AlxGa1-xN contact layer is reduced, warping of the ultraviolet light-emitting diode epitaxial wafer is regulated and controlled, dislocation of upward extension of the first AlN layer is filtered, pressure stress of the n-type AlxGa1-xN contact layer is reduced, crystal quality is improved, and light-emitting efficiency of a device is improved.