Growth device and growth process of low-stress silicon carbide single crystal

Abstract

The invention provides a growth device and a growth process of a low-stress silicon carbide single crystal. The growth device comprises a growth assembly, a reaction assembly, a temperature adjusting assembly, a cooling assembly and a control assembly, wherein a seed crystal is directly placed on a seed crystal support without being fixed, a raw material is sublimated and then moves downwards through a temperature gradient to be in contact with the seed crystal, the stress generated in the silicon carbide crystal generation process is reduced, in the silicon carbide crystal growth process, the position of the seed crystal support is adjusted according to the silicon carbide crystal growth speed, the temperature zone of the silicon carbide crystal growth part is kept unchanged, and slow growth speed and internal stress change caused by temperature zone change are avoided. Meanwhile, the temperature adjusting assembly and the cooling assembly cool the interiors of a reaction furnace and a first heat insulation layer at a preset cooling rate, so that the internal stress in the silicon carbide crystal is reduced, and the problem that the internal stress is too large during growth of the silicon carbide crystal at present is solved.

Description

technical field [0001] The invention relates to the technical field of silicon carbide crystal preparation, in particular to a growth device and a growth process of a low-stress silicon carbide single crystal. Background technique [0002] Silicon carbide single crystal is one of the most important third-generation semiconductor materials. It is widely used in power electronics, In the field of radio frequency devices, optoelectronic devices and other fields, the growth process of silicon carbide single crystal grown by PVT method is carried out in a closed graphite crucible. The silicon carbide single crystal substrate is selected as the seed crystal and fixed on the top of the crucible. The seed crystal is generally fixed by bonding. , the graphite crucible is placed in the crystal growth furnace, vacuumed, and the inert gas is introduced. At a high temperature above 2000 ° C, the silicon carbide powder is sublimated into various gaseous molecules. The silicon carbide cry...

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Problems solved by technology

[0003] The embodiment of the present invention provides a low-stress silicon carbide single crystal growth device and growth process. By adding growth components, reaction components, temperature adjustment components and cooling components, the seed crystal does not need to be fixed on the seed crystal holder, and the raw material is sublimated Finally, the temperature gradient runs downward to contact the seed crystal, which reduces the stress generated during the growth of silicon carbide crystals. During the growth of silicon carbide crystals, the position of the seed crystal support is adjusted according to the growth speed of silicon carbide crystals to maintain carbonization. The temperature zone of the silicon crystal growth part does not change, avoiding the growth rate slowdown and internal stress changes caused by the temperature zone change, and the temperature adjustment component and the cooling component cool the reaction furnace and the first heat insulation layer at a preset cooling rate Internal cooling reduces the internal stress inside the silicon carbide crystal and solves the problem of excessive internal stress in the current growth of silicon carbide crystals

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