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Off-line characterization method of multilayer film Laue lens

A multi-layer film and lens technology, applied in the field of offline characterization, can solve the problem of ignoring high-frequency information, and achieve the effect of simplifying the calculation model

Active Publication Date: 2021-11-12
INST OF HIGH ENERGY PHYSICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

However, the TTD method can only characterize the influence of the film position error on the focusing performance by fitting the overall change trend with the quadratic polynomial of the MLL structure, while ignoring the high-frequency information

Method used

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  • Off-line characterization method of multilayer film Laue lens
  • Off-line characterization method of multilayer film Laue lens
  • Off-line characterization method of multilayer film Laue lens

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Embodiment

[0037] First, the magnetron sputtering method is used to coat the multilayer film 2 on the substrate 1, and the multilayer film material combination is WSi 2 and Si, the thickness d of each layer satisfies Where λ is the wavelength of the incident light, f is the focal length of the lens, and n is the number of film layers. Here we choose the incident wavelength to be 0.124nm, the focal length to be 2.5mm, the value of n to be between 60 and 1495 layers, and the value of d to be 7.2 to 36.1nm. During the coating process, a marker layer is inserted every 1 micron to achieve image splicing of large aperture multilayer films. The cross-section of the multilayer film 2 is polished using focused ion beam polishing (FIB). And by scanning electron microscopy (SEM) to take images between every two adjacent marker layers, such as figure 2 (a) shown.

[0038] Each image is then processed in the following steps:

[0039] (a) The width of each pixel is calculated from the number of...

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Abstract

The invention discloses an off-line characterization method of a multilayer film Laue lens. The off-line characterization method comprises the following steps of: 1) plating a multilayer film on a substrate, and inserting a mark layer at a set interval; 2) polishing the end surface of the multilayer film; (3) shooting an image between every two adjacent mark layers by using a scanning electron microscope; (4) processing each image to obtain a thickness value of each layer of film; (5) generating a periodic local grating according to the thickness of each two adjacent layers of films, and calculating the electric field distribution of a grating emergent surface as the electric field distribution of an emergent surface of the multi-layer film Laue lens by using a CWT method; and 6) calculating the intensity distribution of the electric field propagating from the emergent plane to the focal plane by using Fresnel-Kirchhoff diffraction integral. The influence of the actual thickness on the focusing performance of the multilayer film Laue lens is calculated based on the measured actual thickness of the film layer.

Description

technical field [0001] The invention relates to an off-line characterization method applied to a hard X-ray nano-focusing optical element—a multilayer Lloyd lens, which belongs to the fields of diffraction dynamics theory, synchrotron radiation optics, micro-nano processing measurement, and the like. Background technique [0002] High-energy synchrotron radiation sources have the characteristics of low emissivity, high brightness, and high coherence, and have broad application prospects in many scientific research fields such as material structure dynamics, geophysics, environmental science, biophysics, and protein crystallography. Hard X-rays with strong penetrating power can study the internal structure of materials on a three-dimensional spatial scale, while smaller focused beams represent higher spatial resolution and a stronger ability to characterize the microstructure of materials. The size of the hard X-ray probe is increased from the commonly used micrometer to nano...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N23/2251G21K1/06
CPCG01N23/2251G21K1/065G21K1/062
Inventor 岳帅鹏周亮常广才冀斌
Owner INST OF HIGH ENERGY PHYSICS CHINESE ACAD OF SCI