Single-layer MoS2-Si-based tunneling diode and preparation method thereof

Abstract

The invention discloses a single-layer MoS2-Si-based tunneling diode and a preparation method thereof, and relates to the technical field of semiconductors, and the method comprises the steps: providing a first substrate, and preparing a SiO2 isolation region on the surface of one side of the first substrate to obtain a first substrate structure; obtaining a second substrate, wherein the second substrate comprises a single-layer MoS2 obtained through pre-growth; transferring the single-layer MoS2 to the first surface by using an epitaxial layer transfer printing technology; patterning the single-layer MoS2 to form a single-layer MoS2 channel layer; and depositing on the first surface to form a first electrode and a second electrode, enabling the second electrode to be in direct contact with the SiO2 isolation region and the single-layer MoS2 channel layer, and obtaining the manufactured single-layer MoS2-Si-based tunneling diode. According to the single-layer MoS2-Si-based tunneling diode and the preparation method thereof provided by the invention, the defect density of an interface can be reduced, trap-assisted tunneling is further inhibited, and the sub-threshold swing of a device is improved from a process angle.

Description

technical field [0001] The invention belongs to the field of semiconductor technology, in particular to a single-layer MoS 2 -Si-based tunneling diode and its preparation method. Background technique [0002] As the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, Metal-Oxide Semiconductor Field-Effect Transistor) device feature size gradually reaches deep submicron, the short channel effect appears, resulting in an increase in leakage current, which in turn reduces the power consumption of the device. Increased and reduced reliability, so ultra-steep devices need to be pursued. However, due to the Boltzmann smearing effect, the subthreshold swing of MOSFET cannot break through the limit of 60mV / dec at room temperature. This is determined by the conduction mechanism of MOSFET using hot electron transport. Therefore, ultra-steep devices with new mechanisms are sought without delay. [0003] In related technologies, a new device TFET (Tunneling Field-Effect Transi...

AI Technical Summary

Problems solved by technology

However, in terms of material selection, the traditional Si-based TFET has low tunneling efficiency due to its indirect bandgap and large forbidden band width. Deterioration of threshold slew rate and off-state characteristics

In addition, the heterojunction energy band structure that forms the type II energy band structure is the most ideal tunneling junction, but the heterogeneous tunneling junction formed by the bulk material in the traditional sense has serious lattice mismatch and trap-assisted tunneling. A series of problems, which in turn lead to poor device performance

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