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Quantum dot light-emitting device and preparation method thereof

A quantum dot luminescence and quantum dot technology, which is applied in the field of quantum dot luminescence, can solve the problems of limiting the luminous efficiency of the device and unbalanced charge transfer, and achieve the effects of reducing interface charge accumulation, charge transfer balance, and improving luminous efficiency.

Pending Publication Date: 2021-11-12
合肥福纳科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Device luminous efficiency is an important indicator of quantum dot light-emitting devices. In current quantum dot light-emitting devices, the transport performance of the electron transport layer is usually much higher than that of the hole transport layer, which makes the overall charge transport of the device unbalanced, thus limiting the luminous efficiency of the device.

Method used

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  • Quantum dot light-emitting device and preparation method thereof
  • Quantum dot light-emitting device and preparation method thereof
  • Quantum dot light-emitting device and preparation method thereof

Examples

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preparation example Construction

[0047] As an example, the preparation method of the quantum dot light-emitting device 100 includes:

[0048] Step S1: forming a hole injection layer 120 on the surface of the cleaned anode 110 by annealing after spin coating.

[0049] Step S2: On the surface of the hole injection layer 120 formed in step S1, a hole transport layer 130 is formed by annealing after spin coating.

[0050] Step S3: On the surface of the hole transport layer 130 formed in step S2, a quantum dot light-emitting layer 140 is formed by annealing after spin coating.

[0051] Step S4: On the surface of the quantum dot light-emitting layer 140 formed in step S3, an electron transport layer 150 is formed by annealing after spin coating.

[0052] Step S5: On the surface of the electron transport layer 150 formed in step S4, a cathode 160 is formed by steaming.

[0053] Considering that in order to make the Cu(I)-halogenated complex play a better role in the hole transport layer 130 as a whole, it is neces...

Embodiment 1

[0068] A method for preparing a quantum dot light-emitting device, comprising:

[0069] (1) Preparation of the first solution:

[0070] Take 10mg of Cu(Hbmp)(PPh 3 ) Br was dispersed in 5ml of dichloromethane, stirred evenly to form a homogeneous solution.

[0071] Among them, Cu(Hbmp)(PPh 3 ) The structural formula of Br is shown in the following formula.

[0072]

[0073] (2) Preparation of the second solution:

[0074] Disperse PVK in chlorobenzene and stir evenly to form a homogeneous solution with a PVK concentration of 6 mg / mL.

[0075] (3) Preparation of a mixed solution containing Cu(I)-halogenated complexes:

[0076] Take 1mL of the first solution and 6mL of the second solution, and mix well at room temperature.

[0077] (4) Preparation of quantum dot light-emitting devices:

[0078] The ITO glass substrate was used as the anode.

[0079] Spin-coat the filtered PEDPOT:PSS (poly3,4-ethylenedioxythiophene: polystyrene sulfonate) solution on the cleaned anode ...

Embodiment 2

[0086] A method for preparing a quantum dot light-emitting device, comprising:

[0087] (1) Preparation of the first solution:

[0088] Take 10mg of (dtpb)CuBr and disperse it in 5ml of dichloromethane, stir evenly to form a homogeneous solution.

[0089] Wherein, the structural formula of (dtpb)CuBr is shown in the following formula.

[0090]

[0091] (2) Preparation of the second solution:

[0092] Disperse PVK in chlorobenzene and stir evenly to form a homogeneous solution with a PVK concentration of 6 mg / mL.

[0093] (3) Preparation of a mixed solution containing Cu(I)-halogenated complexes:

[0094] Take 1mL of the first solution and 6mL of the second solution, and mix well at room temperature.

[0095] (4) Preparation of quantum dot light-emitting devices:

[0096] The ITO glass substrate was used as the anode.

[0097] Spin-coat the filtered PEDPOT:PSS (poly3,4-ethylenedioxythiophene: polystyrene sulfonate) solution on the cleaned anode surface at a speed of 35...

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Abstract

The invention provides a quantum dot light-emitting device, and belongs to the technical field of quantum dot light emitting, wherein the hole transport layer of the quantum dot light-emitting device comprises a hole transport material main body and Cu (I)-halogenated coordination compounds, and the Cu (I)-halogenated coordination compounds are dispersed in the hole transport material main body. The preparation method of the quantum dot light-emitting device comprises the step of dispersing Cu (I)-halogenated coordination compounds into a raw material of a hole transport material main body when a hole transport layer is formed. According to the invention, the light-emitting efficiency of the quantum dot light-emitting device can be effectively improved.

Description

technical field [0001] The present application relates to the technical field of quantum dot luminescence, in particular, to a quantum dot luminescent device and a preparation method thereof. Background technique [0002] In the field of display materials, Quantum Dot Light Emitting Diodes (QLED for short) have broad application prospects in flat panel display and solid-state lighting due to their own characteristics of high color threshold, high brightness and narrow peak width. [0003] In the work of quantum dot light-emitting devices, it mainly includes the processes of carrier injection, carrier transport, formation and recombination of excitons. Device luminous efficiency is an important indicator of quantum dot light-emitting devices. In current quantum dot light-emitting devices, the transport performance of the electron transport layer is usually much higher than that of the hole transport layer, which makes the overall charge transport of the device unbalanced, thu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K85/371H10K50/115H10K50/15H10K71/00
Inventor 蒋畅
Owner 合肥福纳科技有限公司