Unlock instant, AI-driven research and patent intelligence for your innovation.

Additives to improve particle dispersion for cmp slurry

A chemical-mechanical, dispersant technology, applied in other chemical processes, chemical instruments and methods, polishing compositions containing abrasives, etc., can solve problems such as substrates that cannot meet strict quality requirements

Pending Publication Date: 2021-11-16
CMC MATERIALS INC
View PDF17 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Microscratches can contribute to substrate defects that fail to meet stringent quality requirements

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Additives to improve particle dispersion for cmp slurry
  • Additives to improve particle dispersion for cmp slurry
  • Additives to improve particle dispersion for cmp slurry

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0042] (1) In embodiment (1), a chemical mechanical polishing composition is presented, which comprises:

[0043] (a) from about 0.05% to about 10% by weight of abrasive;

[0044] (b) dispersant, wherein the dispersant is linear or branched C 2 -C 10 alkylene glycols; and

[0045] (c) water,

[0046] Wherein the chemical mechanical polishing composition has a pH of about 1 to about 7.

[0047] (2) The chemical mechanical polishing composition of embodiment (1) is presented in embodiment (2), wherein the composition comprises about 1% by weight to about 5% by weight of the abrasive.

[0048] (3) The chemical mechanical polishing composition of embodiment (1) or embodiment (2) is presented in embodiment (3), wherein the composition comprises about 2.5% by weight to about 3.5% by weight of the abrasive.

[0049] (4) In embodiment (4), the chemical mechanical polishing composition of any one of embodiments (1)-(3) is presented, wherein the abrasive is selected from treated al...

Embodiment 1

[0094] This example demonstrates the stability of polishing compositions comprising colloidal silica and dispersants according to embodiments of the invention.

[0095] As described in Table 1, Polishing Compositions 1A-1G comprised 3% by weight colloidal silica (Akzo Nobel CJ2-2), 1335 ppm malonic acid, 500 ppm glycine, 618 ppm of a 10% ferric nitrate solution, 2.5% by weight superoxide Hydrogen Oxide, Kathlon TM , and varying amounts of 1,4-butanediol (ie, dispersant), at a pH of 3, 4, or 5. The mean particle size (average particle size, average particle size). The results are displayed graphically in the figure 1 middle.

[0096] Table 1: pH and Amount of Dispersant for Polishing Compositions 1A-1G

[0097] polishing composition Dispersant (weight%) pH Initial average particle size (average particle size, average particle size) (nm) 1A (comparison) 0 3 80 1B (comparison) 0 4 80 1C (comparison) 0 5 80 1D (the present inventio...

Embodiment 2

[0101] This example demonstrates the stability of a polishing composition comprising alumina surface-treated with a sulfonic acid-containing polymer and a dispersant according to an embodiment of the invention.

[0102] As described in Table 2, Polishing Compositions 2A-2G contained 250 ppm alumina surface-treated with a sulfonic acid-containing polymer, 1080 ppm malonic acid, 1000 ppm lysine, 1000 ppm arginine, 500 ppm ferric nitrate, 0.5 % by weight hydrogen peroxide, Kathlon TM , and varying amounts of 1,4-butanediol (ie, dispersant), with a pH of 2 or 4. The average particle size (average particle size) was determined using a particle size analyzer commercially available from Malvern Panalytical (Malvern, UK) shortly after preparation of the polishing compositions and after storage at 45°C for 1, 2 and 3 weeks. The results are displayed graphically in the figure 2 middle.

[0103]Table 2: pH and Amount of Dispersant for Polishing Compositions 2A-2G

[0104] ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
particle sizeaaaaaaaaaa
Login to View More

Abstract

The invention provides a chemical-mechanical polishing composition comprising (a) about 0.05 wt.% to about 10 wt.% of an abrasive; (b) a dispersant, wherein the dispersant is a linear or branched C2-C10 alkylenediol; and (c) water, wherein the chemical-mechanical polishing composition has a pH of about 2 to about 6. The invention also provides a method of chemically-mechanically polishing a substrate by contacting the substrate with the inventive chemical-mechanical polishing composition.

Description

Background technique [0001] Compositions and methods for planarizing or polishing the surface of a substrate are well known in the art. Polishing compositions (also known as polishing slurries) typically contain abrasive materials in a liquid carrier and are applied to a surface by contacting the surface with a polishing pad saturated with the polishing composition. Typical abrasive materials include silicon dioxide, cerium oxide, aluminum oxide, zirconium oxide, and tin oxide. Polishing compositions are typically used in conjunction with polishing pads (eg, polishing cloths or discs). The abrasive material may be incorporated into the polishing pad instead of or in addition to being suspended in the polishing composition. [0002] In many cases it is desirable for the abrasive material to have a narrow particle size distribution. When the abrasive is suspended in the polishing composition, the abrasive may aggregate or agglomerate upon standing, thereby forming particles h...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C09K3/14B24B37/04
CPCB24B1/04C09G1/02C09K3/1436C09K3/1463B24B37/044
Inventor 李泱瑶吴欣谚柯政远吕龙岱黄宏聪
Owner CMC MATERIALS INC