Silicon-based optoelectronic device based on silicon optical adapter plate technology and preparation method

Abstract

The invention provides a silicon-based optoelectronic device based on a silicon optical adapter plate technology and a preparation method. The device comprises a silicon optical device, a switching hole, a silicon through hole, a contact hole, a front surface rewiring layer, a first salient point layer, a back surface rewiring layer and a second salient point layer, wherein the silicon optical device comprises an active device structure and a passive device structure, and the active device structure is provided with an extraction electrode and is covered with a dielectric layer; the switching hole and the silicon through hole penetrate to the silicon substrate, and an insulating layer and a conductive layer are formed on the inner wall of the switching hole and the silicon through hole; the contact hole penetrates to the extraction electrode; the front surface rewiring layer is used for realizing electrical connection between the extraction electrode of the active device structure and the conductive layer; the first salient point layer is formed on the front surface rewiring layer; the back surface rewiring layer is electrically connected with the conductive layer; and the second salient point layer is formed on the back surface rewiring layer. The preparation of the silicon optical adapter plate has high compatibility with a silicon optical device, and the cost of photoelectric hybrid integration can be greatly reduced. Ultra-short distance electrical interconnection is provided for the silicon optical chip and the control chip thereof, and the integration density of the device can be effectively improved.

Description

technical field [0001] The invention belongs to the field of design and manufacture of silicon photonic devices, and in particular relates to a silicon-based optoelectronic device and a preparation method based on the technology of a silicon phototransfer board. Background technique [0002] Silicon photonics technology has the advantages of low power consumption, low cost, and easy large-scale integration, and is generally recognized by the optical communication industry as the core technology of next-generation optical communication devices and module systems. Silicon optical modules generally include laser chips, silicon optical chips, and electrical chips (mainly including photoelectric modulator drivers, photodetector amplifiers, and other matching and control circuits, such as clock recovery, serial-to-parallel conversion, and switching circuits, etc.) and fiber optic arrays, etc. [0003] At present, most of the 100G / 400G silicon optical modules are integrated on the...

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Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a silicon-based optoelectronic device and a preparation method based on the technology of a silicon phototransfer board, which is used to solve the problem of the preparation of a silicon phototransfer board in the prior art and the silicon The compatibility of optical devices is poor, which leads to problems such as high preparation costs of silicon-optical interposers and large device volumes.

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