Nano bismuth oxide anti-radiation ceramic coating, and preparation method and application thereof

A nano-bismuth oxide and ceramic coating technology, applied in the field of anti-radiation materials, can solve problems such as difficult coating, and achieve the effects of extending service life, improving anti-radiation performance and improving reliability

Active Publication Date: 2021-11-23
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the limitations of the material properties of the bismuth oxide material itself, it is difficult to coat it, especially it is difficult to form a uniform, dense, and strong coating with adjustable thickness at low temperature, which is used in microelectronic devices

Method used

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  • Nano bismuth oxide anti-radiation ceramic coating, and preparation method and application thereof
  • Nano bismuth oxide anti-radiation ceramic coating, and preparation method and application thereof
  • Nano bismuth oxide anti-radiation ceramic coating, and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0040] see Figure 1-Figure 4 , the nano-bismuth oxide anti-radiation ceramic coating provided by the embodiment of the present invention, the ceramic coating is formed by solidifying the slurry of the characteristic coating prepared by the following components by mass percentage:

[0041]

[0042]

[0043] The slurry of the characteristic coating forms a ceramic coating after curing on the surface of the shell substrate of the electronic components (especially microelectronic integrated devices, photoelectric integrated devices), and the content of bismuth oxide in the ceramic coating can reach up to 80wt%.

[0044] The nano-bismuth oxide of the characteristic coating is a nano-crystal particle with a particle diameter of ≤500nm.

[0045] The silane is one or more of ethyl orthosilicate, methyltrimethoxysilane, propyltrimethoxysilane, ethyltrimethoxysilane and epoxysilane.

[0046] The acid is one or more of formic acid, acetic acid and citric acid.

[0047] The solve...

specific Embodiment 1

[0060] The nano-bismuth oxide radiation-resistant ceramic coating, preparation method and application provided in the embodiments of the present invention are based on the foregoing embodiments, and the following specific selections have been made:

[0061] Its ceramic coating is made of the slurry of the characteristic coating prepared by the following mass percentage components, and then cured:

[0062]

[0063]

[0064] The content of bismuth oxide in the ceramic coating is more than or equal to 80wt%.

[0065] A method for preparing the nano-bismuth oxide anti-radiation ceramic coating, comprising the steps of:

[0066] S1: Paint preparation

[0067] According to the proportions set above, the components for the preparation of the characteristic paint were ball milled at room temperature at a speed of 250rmp for 4 hours, mixed uniformly to obtain a slurry, and then the slurry was aged at 60°C for 0.5h to obtain the characteristic paint;

[0068] S2: Coating prepara...

specific Embodiment 2

[0072] The anti-radiation ceramic coating of nano-bismuth oxide provided in the embodiments of the present invention, the preparation method and its application are basically the same as those in Example 1, except that:

[0073] Its ceramic coating is made of the slurry of the characteristic coating prepared by the following mass percentage components, and then cured:

[0074]

[0075]

[0076] A method for preparing the nano-bismuth oxide anti-radiation ceramic coating, comprising the steps of:

[0077] S1: Paint preparation

[0078] According to the proportions set above, the components for preparing the characteristic paint were ball milled at room temperature at a speed of 250rmp for 4 hours, mixed uniformly to obtain a slurry, and then the slurry was aged at 80°C for 1 hour to obtain the characteristic paint;

[0079] S2: Coating preparation

[0080] S2.1 After degreasing and dehydrating the surface of the shell base material of electronic components, use the brus...

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Abstract

The invention discloses a nano bismuth oxide anti-radiation ceramic coating, and a preparation method and application thereof. The ceramic coating is formed by curing slurry of a characteristic coating prepared from, by mass, 10-25% of nano bismuth oxide; 20-30% of silane; 2-5% of acid; 45-60% of a solvent; and 1-5% of an auxiliary agent. The slurry of the characteristic coating is cured to form a ceramic coating, and the content of bismuth oxide in the ceramic coating can reach up to 80 wt%. The invention also discloses the preparation method of the ceramic coating. The preparation method comprises the following steps: preparing a characteristic coating, coating the surface of a tube shell substrate material with the characteristic coating, preparing a characteristic coating, and curing to obtain the ceramic coating. The invention further discloses the application of the ceramic coating. The ceramic coating is used for improving the radiation resistance of an electronic component base body, and damage to the electronic component base body by high-energy radiation such as gamma rays or X rays can be effectively reduced.

Description

technical field [0001] The invention relates to the technical field of anti-radiation materials, in particular to a nano-bismuth oxide anti-radiation ceramic coating, a preparation method and an application. Background technique [0002] With the development of aerospace technology and nuclear technology, the subsequent radiation safety issues are receiving more and more attention. The characteristics of radiation protection (irradiation) of microelectronic devices and optoelectronic integrated devices in harsh environments and Protection research is becoming more and more important. In the space environment, cosmic radiation is inevitable, and cosmic radiation can cause damage to microelectronic devices such as CPUs and optoelectronic integrated devices. The radiation effects of digital and analog integrated circuits in microelectronic devices are generally divided into total dose effects (TID), single event effects (SEE) and dose rate (Dose Rate) effects. Total dose effe...

Claims

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Application Information

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IPC IPC(8): C09D1/00C09D7/63G21F1/10G21F1/06G21F1/12B82Y30/00B82Y40/00
CPCC09D1/00C09D7/63G21F1/103G21F1/06G21F1/12B82Y30/00B82Y40/00Y02E30/30
Inventor 甄强沈孙毅布乃敬陈来李榕
Owner SHANGHAI UNIV
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