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IGBT device and preparation method thereof

A technology of devices and doped regions, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of slow switching speed of IGBT devices, so as to improve switching speed, reduce switching capacitance and conduction voltage drop, Solve the effect of electric field concentration

Pending Publication Date: 2021-11-23
CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Based on this, it is necessary to propose a new IGBT device and its preparation method in view of the technical problem of slow switching speed of the current IGBT device

Method used

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  • IGBT device and preparation method thereof
  • IGBT device and preparation method thereof
  • IGBT device and preparation method thereof

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Embodiment Construction

[0037] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. A preferred embodiment of the application is shown in the drawings. However, the present application can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of this application more thorough and comprehensive.

[0038] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terms used herein in the specification of the application are only for the purpose of describing specific embodiments, and are not intended to limit the application. As used herein, the term "and / or" includes any and all combinations of one or more of the associa...

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Abstract

The invention relates to an IGBT device and a preparation method thereof. The device comprises a drift region, a body region, a first doped region, a second doped region, a trench, a filling structure, an extension region, an emitter lead-out structure and a gate lead-out structure, wherein the body region is formed in the drift region; the first doped region and the second doped region are formed in the body region; the trench sequentially penetrates through the first doped region and the body region and extends into the drift region; the filling structure comprises an oxide layer formed on the inner wall of the trench and a first conductive structure and a second conductive structure which are filled in the trench and are isolated from each other, and the bottom depth of the first conductive structure is greater than that of the second conductive structure; the extension region is formed in the drift region below the trench and surrounds the bottom of the trench; the emitter lead-out structure is in contact with the first doped region and the second doped region; and the gate lead-out structure is in contact with the second conductive structure, the drift region and the first doped region have a first conduction type, and the body region, the second doped region and the expansion region have a second conduction type. By forming the expansion region surrounding the bottom of the trench, the switching speed of the IGBT device can be improved.

Description

technical field [0001] The present application relates to the field of semiconductors, in particular to an IGBT device and a preparation method thereof. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) device is a bipolar device, which combines the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, Metal-Oxide-Semiconductor Field-Effect Transistor) and bipolar transistor The working mechanism has the advantages of reduced conduction voltage, high voltage resistance and low power consumption. However, limited by the excess carriers in the drift region in the on-state, the switching speed of the IGBT device is slow. Contents of the invention [0003] Based on this, it is necessary to propose a new IGBT device and its preparation method in view of the technical problem of the current slow switching speed of the IGBT device. [0004] An IGBT device comprising: [0005] a drift region having a first conductivit...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/40H01L29/739H01L21/331
CPCH01L29/7398H01L29/7397H01L29/66348H01L29/0684H01L29/0623H01L29/407H01L29/40H01L29/739H01L29/66234H01L29/06
Inventor 方冬肖魁卞铮胡金节
Owner CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD