Power element with zener diodes
A technology of Zener diodes and power components, applied in the direction of diodes, electrical components, transistors, etc., can solve problems such as inability to effectively reduce product volume, limit the design range of output voltage, increase complexity, etc., and achieve wide design range and high degree of change , The effect of simplifying the complexity of the process
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no. 1 example
[0036] see Figure 1A to Figure 1H , figure 2 and image 3 As shown, the first embodiment of the present invention provides a method for manufacturing a power device 100 . The manufacturing method of the power device includes steps S110 to S180. in, Figure 1A to Figure 1H It is a schematic flow chart of the manufacturing method of the power element according to the first embodiment of the present invention, figure 2 It is a schematic cross-sectional view of a power element according to the first embodiment of the present invention (indicates the equivalent circuit corresponding to the element structure), and image 3 is an equivalent circuit diagram of a power element according to the first embodiment of the present invention.
[0037] It must be noted that the order of the steps and the actual operation mode in this embodiment can be adjusted according to the needs, and are not limited to the one in this embodiment.
[0038] The power device 100 of this embodiment is a...
no. 2 example
[0097] see Figure 4 and Figure 5 As shown, the second embodiment of the present invention also provides a power element 100'. Figure 4 is a partial schematic diagram of a power element according to the second embodiment of the present invention, and Figure 5 is an equivalent circuit diagram of a power element according to the second embodiment of the present invention.
[0098] The structural design of the power element 100' of the second embodiment of the present invention is substantially the same as that of the above-mentioned first embodiment, except that the power element 100' of this embodiment includes a plurality of zener diodes 4 (V Z1 to V ZN ), which is configured to receive a reverse bias.
[0099] Such as Figure 4 shown, a plurality of the Zener diodes 4 (V Z1 to V ZN ) are formed on the cladding insulating layer 23 of the insulating layer 2 in series with each other, and are located in the Zener diode forming region B1 of the circuit element forming r...
no. 3 example
[0105] see Image 6 and Figure 7As shown, the third embodiment of the present invention also provides a power element 100". Image 6 is a partial schematic diagram of a power element according to a third embodiment of the present invention, and Figure 7 is an equivalent circuit diagram of a power element according to a third embodiment of the present invention.
[0106] The structural design of the power element 100 ″ of the third embodiment of the present invention is substantially the same as that of the above-mentioned second embodiment, the difference is that the power element 100 ″ of this embodiment further includes a plurality of common diodes 7 (V F1 to V FN ), and a plurality of the ordinary diodes 7 (V F1 to V FN ) is further connected in series with the aforementioned plurality of zener diodes 4 (V Z1 to V ZN ).
[0107] In this embodiment, a plurality of common diodes 7 (V F1 to V FN ) is also formed on the cladding insulating layer 23 of the insulating...
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Abstract
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