Device and method for growing silicon carbide crystals by liquid phase method

Abstract

The invention relates to a device and method for growing silicon carbide crystals by a liquid phase method. The device includes: a crucible for containing the Si alloy auxiliary solution and a seed rod for fixing the silicon carbide seed crystal; the device also includes a liquid level maintaining device, which includes a liquid level maintaining ring and The driving device used to push the liquid level to keep the ring down to the Si alloy auxiliary solution. The method is as follows: melting the growth raw material containing Si and metal elemental substance into a Si alloy co-solution; lowering the silicon carbide seed crystal and contacting the co-solution phase to grow the silicon carbide crystal; during the growth process of the silicon carbide crystal, The liquid level maintenance ring is pushed down by the pushing device into the Si alloy auxiliary solution to keep the liquid level of the Si alloy auxiliary solution constant. The invention can keep the height of the liquid level constant and the temperature field constant during the growth process of the silicon carbide crystal, can also maintain the stability of the auxiliary solution components and increase the thickness of the generated silicon carbide crystal.

Description

Device and method for growing silicon carbide crystal by liquid phase method technical field The invention belongs to the silicon carbide single crystal liquid phase production technical field, relate in particular to a kind of liquid phase method growth silicon carbide crystal device and method. Background technique [0002] Silicon carbide is one of the wide-bandgap semiconductor materials that has received extensive attention, with low density, large band gap, breakdown It has the advantages of high field strength, high saturation electron mobility, good thermal stability and chemical stability, etc. ideal substrate material for devices and blue light-emitting diodes. The main growth method of silicon carbide at present is physical vapor transport method, although this method is relatively mature, it has been the market The field supplies a large number of silicon carbide single crystal substrates, but due to the poor stability of the gas growth environment during...

AI Technical Summary

Problems solved by technology

Further lead to the reduction of the proportion of silicon in the solution, the smaller distance between the growth end (at the solid-liquid interface) and the raw material end (the bottom of the graphite crucible), and the smaller temperature gradient, which will reduce the quality of the grown crystal and the sustainable progress of crystal growth.

At present, it is only possible to use a larger crucible and load more co-solution to offset the influence of the co-solution composition and temperature field during the growth process, but this will increase the cost of crystal growth.

Images