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Magnetization turnover device based on orbit transfer torque and implementation method thereof

A technology of orbital transfer and magnetization reversal, applied in the field of spintronics of condensed matter physics, can solve the problems of poor device durability, non-separation of read and write current paths, and increased device complexity

Active Publication Date: 2021-12-10
PEKING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The use of the Oersted field generated by the current to achieve magnetization reversal will increase the complexity of the device; while the spin transfer torque faces the problem of not separating the read and write current paths, resulting in poor device durability; the spin-orbit moment realizes the separation of the read and write current paths , but requires the assistance of an external magnetic field to achieve the magnetization switching of the perpendicular magnetic anisotropy

Method used

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  • Magnetization turnover device based on orbit transfer torque and implementation method thereof
  • Magnetization turnover device based on orbit transfer torque and implementation method thereof

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Embodiment Construction

[0044] The present invention will be further elaborated below through specific embodiments in conjunction with the accompanying drawings.

[0045] Such as figure 1 As shown, the magnetization switching device based on track transfer torque in this embodiment includes: a substrate 1, an insulating dielectric layer 2, source and drain electrodes, a measurement electrode, a heterojunction, a top gate and a back gate; wherein, on the front side of the substrate Form an insulating dielectric layer 2; form a back gate on the back of the substrate; form a source-drain electrode and a pair of measuring electrodes on the insulating dielectric layer, the source-drain electrodes are parallel to each other, the measuring electrodes are parallel to each other, and the source-drain electrodes and the measuring electrodes are perpendicular to each other , the source-drain electrodes and a pair of measuring electrodes constitute a cross-shaped bottom electrode 3; a heterojunction is formed on...

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Abstract

The invention discloses a magnetization turnover device based on track transfer torque and an implementation method thereof. A direct-current write-in current is introduced through a source electrode and a drain electrode to polarize the out-of-plane orbital magnetic moment and then generate an out-of-plane anti-damping moment effect, and magnetization overturning, called orbital transfer moment, of a perpendicular magnetic anisotropy free ferromagnetic layer can be achieved under the out-of-plane anti-damping moment effect without assistance of an additional magnetic field. After the write-in current is removed, the perpendicular magnetic anisotropy free ferromagnetic layer keeps the changed magnetization state, so that the free ferromagnetic layer has non-volatility. A direct-current reading current is introduced through the source and drain electrodes, and the Hall resistance of a heterojunction is obtained through a measuring electrode, so that the magnetization state of the vertical magnetic anisotropy free ferromagnetic layer is reflected. The direction of the write-in current is changed to realize a reverse orbit transfer torque, so that the magnetization of the vertical magnetic anisotropy free ferromagnetic layer is reversely overturned. The critical current required by the track transfer torque for realizing magnetization overturning is smaller, so that the power consumption of the device can be greatly reduced.

Description

technical field [0001] The invention relates to the field of spintronics of condensed matter physics, in particular to a perpendicular magnetic anisotropy magnetization flipping device without the assistance of an external magnetic field and a realization method thereof. Background technique [0002] Spintronics (spintronics) utilizes the spin and magnetic moment degrees of freedom of electrons to add electron spin and magnetic moment transport to solid devices in addition to charge transport. Spintronics is an emerging subject and technology, which has potential applications in hard disk heads, magnetic random access memory, spin field emission transistors, and spin light-emitting diodes. In the field of spintronics, an important discovery is the giant magnetoresistance effect (Giant Magnetoresistance). The giant magnetoresistance effect refers to the phenomenon that the resistivity of magnetic materials changes greatly when there is an external magnetic field. It usually...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/06H01L43/04H01L43/14G11B5/127H10N52/00H10N52/01H10N52/80
CPCG11B5/1276H10N52/80H10N52/01H10N52/101
Inventor 廖志敏叶兴国朱鹏飞徐文正
Owner PEKING UNIV
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