Patents
Literature
Hiro is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Hiro

47results about "Heads with composite cores" patented technology

Magnetic device and magnetic memory

A magnetic device comprises first through third ferromagnetic layers, first and second intermediate layers and a couple of electrodes. The first ferromagnetic layer includes magnetic layers and one or more nonmagnetic layers which are alternately stacked, at least one layer of the magnetic layers has magnetization substantially fixed to a first direction, and two or more layers of the magnetic layers are ferromagnetically coupled via the nonmagnetic layers while having easy axes of magnetization parallel to a film plane. The second ferromagnetic layer has magnetization substantially fixed to a second direction. The third ferromagnetic layer is provided between the first ferromagnetic layer and the second ferromagnetic layer. The third ferromagnetic layer has a variable direction of magnetization. The first and second intermediate layers are provided between the ferromagnetic layers. The electrodes are configured to provide write current between the first and second ferromagnetic layers to cause spin-polarized electrons to act on the third ferromagnetic layer so that the direction of magnetization of the third ferromagnetic layer is determined depending on a direction of the current. The ferromagnetic coupling has a strength such that a parallel magnetic alignment of the magnetic layers is maintained when the write current.
Owner:KATANA SILICON TECH LLC

Magnetization turnover device based on orbit transfer torque and implementation method thereof

The invention discloses a magnetization turnover device based on track transfer torque and an implementation method thereof. A direct-current write-in current is introduced through a source electrode and a drain electrode to polarize the out-of-plane orbital magnetic moment and then generate an out-of-plane anti-damping moment effect, and magnetization overturning, called orbital transfer moment, of a perpendicular magnetic anisotropy free ferromagnetic layer can be achieved under the out-of-plane anti-damping moment effect without assistance of an additional magnetic field. After the write-in current is removed, the perpendicular magnetic anisotropy free ferromagnetic layer keeps the changed magnetization state, so that the free ferromagnetic layer has non-volatility. A direct-current reading current is introduced through the source and drain electrodes, and the Hall resistance of a heterojunction is obtained through a measuring electrode, so that the magnetization state of the vertical magnetic anisotropy free ferromagnetic layer is reflected. The direction of the write-in current is changed to realize a reverse orbit transfer torque, so that the magnetization of the vertical magnetic anisotropy free ferromagnetic layer is reversely overturned. The critical current required by the track transfer torque for realizing magnetization overturning is smaller, so that the power consumption of the device can be greatly reduced.
Owner:PEKING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products