LED epitaxial structure, preparation method thereof, and LED chip

Abstract

The invention provides an LED epitaxial structure, a preparation method thereof, and an LED chip. An electron cooling layer composed of non-doped InGaN is arranged between an N-type semiconductor layer and an MQW layer, a quantum barrier comprises a GaN layer, and a quantum well comprises an InGaN layer; and the In component of the electron cooling layer is smaller than that of the quantum well. Lattice mismatch between the electron cooling layer formed by InGaN and the GaN layer in the quantum barrier is extremely small, so that improvement of crystal quality during subsequent growth of the MQW layer is facilitated; meanwhile, the InGaN electron cooling layer can reduce the average free path of electrons in the MQW layer, can also play a role in blocking the electrons in the early stage, reduces the valence band barrier height, and indirectly increases hole injection, thereby promoting efficient recombination of carriers in the MQW layer.

Description

technical field [0001] The invention relates to the field of light-emitting diodes, in particular to an LED epitaxial structure, a preparation method thereof, and an LED chip. Background technique [0002] In recent years, due to their excellent physical and chemical properties (large band gap, high breakdown electric field, high electron saturation mobility, etc.), III-V nitrides have received extensive attention and applications in the fields of electronics and optics, such as the current market The hot blue-green light display products on the market, as well as the ultraviolet light sterilization and disinfection modules that are popular after the new crown epidemic. However, due to the limitations of materials, structures and processes in practical applications, there are still many problems in the large-scale application of various emerging LED products, such as serious overflow caused by insufficient electron confinement; low hole injection efficiency, which limits the...

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Problems solved by technology

However, although the AlGaN electron blocking layer inserted before the MQW can also play the role of electron blocking in the early stage, due to the excessive lattice mismatch between it and GaN, it will inevitably affect the crystal growth quality of the subsequent MQW; The AlGaN layer is also too large in lattice mismatch, which leads to severe band bending and enhanced polarization electric field, which affects the overlap of electron-hole wave functions in MQW, thereby reducing the luminous efficiency.

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