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Super-junction IGBT device structure with enhanced carrier concentration and manufacturing method

A technology of carrier concentration and device structure, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as large conduction voltage drop, reduce conduction voltage drop, and increase carrier concentration , The effect of reducing the width of the table

Active Publication Date: 2021-12-24
UNIV OF ELECTRONICS SCI & TECH OF CHINA +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to improve the problem that the conduction mechanism of the traditional super-junction IGBT is switched between bipolar and unipolar when it is conducting forward conduction under different doping concentrations of the N and P column regions, and the conduction voltage drop is relatively large under the medium doping concentration, the present invention A superjunction IGBT structure with enhanced carrier concentration is proposed as figure 2 As shown, the present invention introduces a P-type floating region structure on the right side of the trench gate and above the P-column, which changes the positional relationship between the P-column, P-type base region, and emitter in the traditional super-junction IGBT, and prevents the P-column The direct connection with the P-type base region and the emitter eliminates the hole extraction effect of the P-type base region and the P-type base region under high concentration of the column region. A strong conductance modulation effect occurs, and the devices all work in the bipolar conduction mode, which eliminates the influence of the doping concentration of the pillar region on the forward conduction voltage drop

Method used

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  • Super-junction IGBT device structure with enhanced carrier concentration and manufacturing method
  • Super-junction IGBT device structure with enhanced carrier concentration and manufacturing method
  • Super-junction IGBT device structure with enhanced carrier concentration and manufacturing method

Examples

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Embodiment 1

[0073] An embodiment of a superjunction IGBT device with enhanced carrier concentration, such as figure 2 As shown, it includes: a collector metal 1, a P-type collector region 2, and an N-type field stop layer 3 stacked in sequence from bottom to top, and a super-junction N column 5 and a super-junction N column 5 are arranged above the N-type field stop layer 3. The super junction P column 4 contacted by the column 5, the first trench structure located above the super junction N column 5, the first trench structure includes a gate dielectric layer 6 and a gate electrode 7 inside the gate dielectric layer 6;

[0074] There is a P-type floating area 13 above the super-junction P column 4, and a P-type base area 8 is located on the upper part of the super-junction N column 5; the P-type base area 8 is located on the left side of the trench structure, and the P-type floating area 13 is located in the trench On the right side of the structure, the upper part of the P-type base reg...

Embodiment 2

[0104] An embodiment of a superjunction IGBT device with enhanced carrier concentration, such as image 3 As shown, the difference between this embodiment and Embodiment 1 is that the depth of the P-type floating region 13 exceeds the depth of the first trench structure.

[0105] The deeper P-type floating region helps to improve the electric field distribution at the bottom of the trench and improve device reliability.

Embodiment 3

[0107] An embodiment of a superjunction IGBT device with enhanced carrier concentration, such as Figure 4 As shown, the difference between this embodiment and Embodiment 1 is that an N-type charge storage layer 17 is introduced into the super junction N pillar 5 below the P-type base region 8, and the junction depth of the N-type charge storage layer 17 is smaller than that of the first For the depth of the trench structure, the concentration of the N-type charge storage layer 17 exceeds the concentration of the superjunction N pillars.

[0108] The introduction of the N-type charge storage layer further increases the concentration of carriers, enhances the conductance modulation effect of the drift region, and reduces the conduction voltage drop of the device.

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Abstract

The present invention provides a super-junction IGBT device structure with enhanced carrier concentration and a manufacturing method. According to the present invention, a P-type floating region structure is introduced to the right side of a trench gate and above a P column, the position relation among a P column, a P-type base region and an emitting electrode in a traditional super-junction IGBT is changed, the direct connection of the P column, the P-type base region and the emitting electrode is prevented, and the extraction effect of the P column and the P-type base region to a hole under high column region concentration is eliminated; a stronger conductivity modulation effect occurs in a drift region under different N and P column region doping concentrations, the device works in a bipolar conduction mode, and the influence of the column region doping concentration on the forward conduction voltage drop is eliminated. Meanwhile, the introduction of the P-type floating region reduces the width of a mesa of the device, thereby improving the carrier concentration at one side of an emitter, and reducing the conduction voltage drop.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to a super junction insulated gate bipolar transistor with enhanced carrier concentration. Background technique [0002] Insulated gate bipolar transistor (IGBT) combines the advantages of field effect transistor (MOSFET) and bipolar juncture transistor (BJT), and has developed into one of the core electronic components in modern power electronic circuits. IGBT not only has the advantages of easy driving of MOSFET, low input impedance and fast switching speed, but also has the advantages of large on-state current density, low conduction voltage, low loss and good stability of BJT. Due to its excellent performance, IGBT is widely used in various fields of transportation, communication, household appliances and aerospace, which greatly improves the performance of power electronic systems. [0003] IGBT utilizes the drift region with low doping concentration to achie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/739H01L21/331
CPCH01L29/7398H01L29/7397H01L29/66348H01L29/0684H01L29/0696
Inventor 张金平肖翔涂元元张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA