Gallium nitride normally-off device with mixed gate electrode structure and preparation method of gallium nitride normally-off device
A gate electrode, normally-off technology, which is applied in the field of gallium nitride normally-off devices and its preparation, can solve the problem of not being able to meet the gate electrode threshold voltage requirements, and achieve the effects of improving long-term reliability and increasing switching frequency.
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[0042] In order to increase the threshold voltage of the device, an embodiment of the present invention proposes a gallium nitride normally-off device with a mixed gate electrode structure, please refer to figure 1 , figure 1 It is a schematic structural diagram of a gallium nitride normally-off device with a hybrid gate electrode structure provided by an embodiment of the present invention, and the device includes:
[0043] substrate layer 1;
[0044] A buffer layer 2, a GaN channel layer 3 and an AlGaN layer 4 disposed on the substrate layer 1 in sequence;
[0045] The P-GaN cap layer 5 and two ohmic electrodes 8 arranged on the AlGaN layer 4; wherein, the two ohmic electrodes 8 are respectively arranged on both ends of the upper surface of the AlGaN layer 4, and the P-GaN cap layer 5 is arranged on two ohmic electrodes. between the electrodes 8;
[0046] Be arranged on the P-GaN cap layer 5 and the gate dielectric layer 6 on both sides of the P-GaN cap layer 5; wherein, ...
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