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AlGaN-based deep ultraviolet LED epitaxial structure of In-Si co-doped quantum well and preparation method of AlGaN-based deep ultraviolet LED epitaxial structure

An epitaxial structure and co-doping technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of poor material quality and unsatisfactory reliability, reduce non-radiative recombination centers, improve internal quantum efficiency, and improve reliability sexual effect

Inactive Publication Date: 2021-12-24
SONGSHAN LAKE MATERIALS LAB
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although it adopts Mg-doped multi-quantum well structure to suppress the quantum-confined Stark effect, the multi-quantum well is relatively low in Al composition, the quality of the grown material is poor, there are a large number of non-radiative recombination centers, and the reliability is relatively insufficient. ideal

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  • AlGaN-based deep ultraviolet LED epitaxial structure of In-Si co-doped quantum well and preparation method of AlGaN-based deep ultraviolet LED epitaxial structure
  • AlGaN-based deep ultraviolet LED epitaxial structure of In-Si co-doped quantum well and preparation method of AlGaN-based deep ultraviolet LED epitaxial structure
  • AlGaN-based deep ultraviolet LED epitaxial structure of In-Si co-doped quantum well and preparation method of AlGaN-based deep ultraviolet LED epitaxial structure

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Embodiment 1

[0026] Embodiment 1: A method for preparing an In-Si co-doped quantum well AlGaN-based deep ultraviolet LED epitaxial structure provided in this embodiment comprises the following steps:

[0027] (1) Place the C-face sapphire as the substrate in the MOCVD graphite carrier plate, and place it at a temperature of 1200-1400°C, a pressure of 75-200torr, and a H 2 and N 2 Under the condition of mixed gas as carrier gas, wash for 5 minutes;

[0028] (2) At a temperature of 950°C, a pressure of 80torr, a V / III ratio of 1000, and a H 2 and N 2 Under the condition of mixed gas as carrier gas, Al source and ammonia gas are passed into the reaction chamber to grow a low-temperature AlN buffer layer with a thickness of 300nm;

[0029] (3) At a temperature of 1300°C, a pressure of 80torr, a V / III ratio of 1000, and a H 2 and N 2 Under the condition of mixed gas as the carrier gas, the Al source and ammonia gas are passed into the reaction chamber to grow a high-temperature AlN layer w...

Embodiment 2

[0037] Embodiment 2: A method for preparing an In-Si co-doped quantum well AlGaN-based deep ultraviolet LED epitaxial structure provided in this embodiment includes the following steps:

[0038] (1) Place the C-face sapphire as the substrate in the MOCVD graphite carrier plate, and place it at a temperature of 1200-1400°C, a pressure of 75-200torr, and a H 2 and N 2 Under the condition of mixed gas as carrier gas, wash for 5 minutes;

[0039] (2) At a temperature of 950°C, a pressure of 80torr, a V / III ratio of 1000, and a H 2 and N 2 Under the condition of mixed gas as carrier gas, Al source and ammonia gas are passed into the reaction chamber to grow a low-temperature AlN buffer layer with a thickness of 300nm;

[0040] (3) At a temperature of 1300°C, a pressure of 80torr, a V / III ratio of 1000, and a H 2 and N 2 Under the condition of mixed gas as the carrier gas, the Al source and ammonia gas are passed into the reaction chamber to grow a high-temperature AlN layer wi...

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Abstract

The invention discloses an AlGaN-based deep ultraviolet LED epitaxial structure of an In-Si co-doped quantum well and a preparation method of the AlGaN-based deep ultraviolet LED epitaxial structure. The AlGaN-based deep ultraviolet LED epitaxial structure comprises a substrate, a low-temperature AlGaN buffer layer, a high-temperature AlN layer, an AlGaN / AlGaN superlattice stress buffer layer, an n-type AlGaN layer, an active light-emitting region AlGaN / AlGaN multi-quantum well, an electron blocking p-type AlGaN layer, a current expansion p-type AlGaN layer and a p-type GaN contact layer which are sequentially distributed from bottom to top. In-Si co-doped atoms are introduced into a multi-quantum well region, annihilation of a non-radiative recombination center of a multi-quantum well active region can be realized, radiative recombination luminescence of the active region is enhanced, the internal quantum efficiency of a deep ultraviolet LED epitaxial structure is improved, meanwhile, the In-Si atoms can clamp dislocation migration at a high temperature, and the reliability of the device under the long-time working condition is improved.

Description

technical field [0001] The invention relates to the technical field of deep ultraviolet LED epitaxial structures, in particular to an AlGaN-based deep ultraviolet LED epitaxial structure of In-Si co-doped quantum wells and a preparation method thereof. Background technique [0002] At present, the electro-optic efficiency of deep ultraviolet LED is generally between 3-5%, mainly due to the poor crystal quality of AlN template, the low quantum efficiency in the quantum well, and the low light extraction efficiency, of which the internal quantum efficiency is generally below 80%. , there is a certain room for improvement, and the main factors affecting the internal quantum efficiency are: the strong polarized electric field causes the wave function overlap of holes and electrons in the quantum well to decrease, which reduces the probability of radiative recombination; the AlN template grown on the sapphire substrate The dislocations in the quantum well extend to the quantum we...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/32H01L33/00
CPCH01L33/06H01L33/325H01L33/007
Inventor 王新强康俊杰罗巍袁冶刘上锋王后锦李永德王维昀李泰万文婷
Owner SONGSHAN LAKE MATERIALS LAB
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