A light-emitting diode epitaxial wafer and its manufacturing method

A technology of light-emitting diodes and manufacturing methods, which is applied to semiconductor devices, electrical components, circuits, etc., and can solve problems such as increased heat generation of LED chips and decreased LED light efficiency
CN108550676BActive Publication Date: 2020-07-07HC SEMITEK ZHEJIANG CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
HC SEMITEK ZHEJIANG CO LTD
Publication Date
2020-07-07

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Abstract

The invention discloses a light-emitting diode epitaxial wafer and a manufacturing method thereof, and belongs to the technical field of semiconductors. The light-emitting diode epitaxial wafer comprises a substrate, and a buffer layer, a non-doped GaN layer, an N-type layer, a multiple quantum well layer, a P-type doping layer and a P-type contact layer which are laminated on the substrate in sequence, wherein the P-type doping layer comprises at least one laminated structure; when the P-type doping layer comprises a plurality of laminated structures, the laminated structures are arranged ina laminated manner in sequence, each laminated structure comprises a first sub-layer and a second sub-layer which are arranged in the laminated manner in sequence, each first sub-layer is an Mg-dopedAlxGa1-xN layer, x is greater than 0 and smaller than or equal to 0.3, each second sub-layer is an Mg-doped InyGa1-yN layer, and y is greater than 0 and smaller than or equal to 0.2. The P-type dopinglayer can block electrons from moving towards a P-type layer, and simultaneously effective injection of holes is improved, so that the electrons and the holes give out light compositely through the radiation on the multiple quantum well layer, and then the lighting effect of an LED is improved.
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Description

technical field

[0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique

[0002] LED (Light Emitting Diode, Light Emitting Diode) is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly and green new solid-state lighting source, it is being rapidly and widely used, such as traffic lights, car interior and exterior lights, urban landscape lighting, mobile phone backlights, etc.

[0003] The epitaxial wafer is the main component of the LED. The existing GaN-based LED epitaxial wafer includes a substrate and a buffer layer stacked on the substrate in sequence, an undoped GaN layer, an N-type layer, a multi-quantum well layer, and a P-type layer. layer and the P-type contact layer. Among them, the N-type layer is doped with Si to provide electrons; the P-type layer is doped with Mg to provide holes; when ...

Claims

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