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Method for manufacturing photomask and photomask blank

A photomask and etching mask technology, applied in the field of photomask manufacturing and photomask blanks, can solve the problems of high aspect ratio, peeling, and poor pattern transfer

Pending Publication Date: 2021-12-31
SHIN ETSU CHEM IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, if a finer photomask pattern is processed without changing and maintaining the thickness of the resist film, the ratio of the film thickness to the pattern width, the so-called aspect ratio, becomes high, and the shape of the resist pattern deterioration
Therefore, pattern transfer cannot be performed well, and in some cases, the resist pattern may collapse or peel off

Method used

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  • Method for manufacturing photomask and photomask blank
  • Method for manufacturing photomask and photomask blank
  • Method for manufacturing photomask and photomask blank

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0096] A MoSiON film (75 nm thick) was formed as a phase shift film (fourth inorganic film) by sputtering on a quartz substrate having a size of 152 mm square and about 6 mm thick. By using argon, oxygen and nitrogen as sputtering gases, and using MoSi 2 Two types of targets, the target and the Si target, were used as sputtering targets, and sputtering was performed while rotating the quartz substrate at 30 rpm. The composition of the phase shift film was measured by the ESCA (Electron Spectroscopy for Chemical Analysis) method (XPS method) using K-Alpha (manufactured by Thermo Fisher Scientific K.K.). The same applies to the ESCA method below. The film has a composition with an atomic ratio of Mo:Si:O:N=1:4:1:4.

[0097] Next, from the quartz substrate side, a CrN layer (30 nm in thickness) and a CrON layer (20 nm in thickness) were formed on the fourth inorganic film by sputtering as a light-shielding film (third inorganic film). For the CrN layer, by using argon and nitr...

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Abstract

The invention relates to a method for manufacturing a photomask and a photomask blank. A photomask is produced from a photomask blank by the following method; the photomask blank includes a transparent substrate, a first inorganic film including silicon and not including chromium, and a second inorganic film including chromium and not including silicon; the second inorganic film is in contact with the first inorganic film; the method includes the steps of forming a pattern of a second inorganic film by fluorine-based dry etching using a resist pattern; and forming a pattern of the first inorganic film by fluorine-based dry etching using the pattern of the second inorganic film.

Description

technical field [0001] The invention relates to a method for manufacturing a photomask for manufacturing semiconductor integrated circuits and a photomask blank suitable for the method. Background technique [0002] In recent semiconductor processing technologies, the challenge of higher integration of large-scale integrated circuits has placed increasing demands on the miniaturization of circuit patterns. There is an increasing demand for further reduction in size of wiring patterns constituting circuits and miniaturization of contact hole patterns for cells constituting interlayer connections. Therefore, in the manufacture of circuit pattern writing photomasks used in photolithography for forming such wiring patterns and contact hole patterns, technology capable of accurately writing finer circuit patterns is required to meet miniaturization demands. [0003] In order to form a higher-precision photomask pattern on a photomask substrate, it is first necessary to form a hi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/80G03F1/60G03F1/62
CPCG03F1/80G03F1/60G03F1/62G03F1/26G03F1/54G03F1/32H01L21/0332H01L21/0337
Inventor 笹本纮平
Owner SHIN ETSU CHEM IND CO LTD