Power semiconductor device

Abstract

The invention provides a power semiconductor device, which comprises an active area, a terminal area surrounding the active area and a transition area located between the active area and the terminal area, the active area is provided with a first semiconductor device, and the transition area is provided with a second semiconductor device. The source electrode of the first semiconductor device and the conductive layer in the third groove part are electrically connected with the emitter electrode, the conductive layer in the first groove part and the conductive layer in the second groove part are electrically connected with the grid electrode, and the source electrode of the second semiconductor device, the conductive layer in the third groove part and the well region between the second groove part and the third groove part are electrically connected with the emitter electrode. The conductive layer in the first groove part and the conductive layer in the second groove part are electrically connected with the grid electrode. When the device is switched on, the switching-on speed of the device and the hole concentration of front storage can be effectively improved, the switching-on voltage drop and the switching-on loss are reduced, when the device is switched off, holes can be quickly released, the switching-off loss is reduced, the anti-latch-up capability of the device is improved, and the reliability of the device is improved.

Description

technical field [0001] The invention belongs to the field of semiconductor design and manufacture, in particular to a power semiconductor device. Background technique [0002] As a key switching device for weak current control and strong current, power devices are widely used in industries, home appliances, electric locomotives, electric vehicles and other fields. The development direction of power devices has always been to reduce their own power loss while ensuring the normal switching of the device, which requires the conduction voltage of the device to be reduced and the switching loss to be small. [0003] IGBT (Insulated Gate Bipolar Transistor), Insulated Gate Bipolar Transistor, is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor), with MOSFET The advantages of high input impedance and low conduction voltage drop of GTR. The saturation voltage of GTR decreases...

AI Technical Summary

Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a power semiconductor device, which is used to solve the problems of high power loss, slow turn-on speed and prone to latch-up effect in the prior art.

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