Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Polishing process for improving surface roughness of silicon wafer

A silicon wafer surface and roughness technology, applied in surface polishing machine tools, grinding/polishing equipment, manufacturing tools, etc., can solve the problem of high silicon wafer roughness

Pending Publication Date: 2022-01-14
中环领先半导体材料有限公司
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The silicon wafers processed by the existing silicon wafer polishing process have high roughness

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polishing process for improving surface roughness of silicon wafer
  • Polishing process for improving surface roughness of silicon wafer
  • Polishing process for improving surface roughness of silicon wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The specific implementation of the polishing process for improving the surface roughness of silicon wafers provided by the present invention will be described in detail below in conjunction with the accompanying drawings.

[0023] A polishing process for improving the surface roughness of a silicon wafer, comprising the steps of:

[0024] S1. First, choose a crystal ingot with a diameter of 200mm and no single crystal defect (COP-Free), and check the equipment status before polishing to ensure that there is no abnormality before adjusting the process;

[0025] S2. Set the rotation speed of the large plate and the center guide wheel to 1:2, set the temperature of the ice polishing machine to 30°C, use NP6504 as the coarse polishing liquid, and the ratio is 1:15; use NP7000 as the medium polishing liquid, and the ratio is 1: 30; The fine polishing liquid is NP8000, and the ratio is 1:30. The concentration and temperature of the liquid will determine the strength of the po...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a polishing process for improving surface roughness of a silicon wafer. The process comprises the steps that S1, a crystal bar with the diameter being 200 mm and without single crystal defects (COP-Free) is selected, the equipment state is checked before polishing, and process adjustment is conducted after it is guaranteed that no abnormity exists; S2, the rotating speed of a large disc, the rotating speed of a center guide wheel and the temperature of a polishing ice maker are set; S3, a rough polishing pad is FPK660C2, an intermediate polishing pad is 7355-000FE, and a fine polishing pad is a 275NX flat pad; S4, the coordination of FFU setting and air exhaust setting in a feeding wax sticking machine of a polishing machine is guaranteed, the working state of an electrostatic ion rod is checked, and it is guaranteed that the internal environment of the wax sticking machine reaches the first-level particle standard; S5, the wax dripping amount is calibrated; S6, the polishing solution processing flow and the cooling water flow are calibrated; and S7, after polishing is finished, pre-washing feeding is conducted, and after a wax layer and surface particles on the back face of the product are washed up, the surface roughness of the product is measured. The processed silicon wafer has the advantage of low roughness.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a polishing process for improving the surface roughness of silicon wafers. Background technique [0002] Whether it is from a technological or economic point of view, the importance of semiconductors is huge and irreplaceable, and the government's support for the industry is also very firm. With the commissioning of my country's semiconductor manufacturing production line, the continuous improvement of semiconductor manufacturing technology and the rapid development of the semiconductor terminal product market, the semiconductor wafer market in mainland my country has entered a stage of rapid development. From 2016 to 2018, the semiconductor monocrystalline silicon wafer in mainland my country Sales rose from $500 million to $992 million, a compound annual growth rate of 41%. According to the calculation based on the annual compound growth rate, the sales of semiconduct...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B24B1/00B24B29/02
CPCB24B1/00B24B29/02
Inventor 张超仁侯国荣王彦君孙晨光曹锦伟
Owner 中环领先半导体材料有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products