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Method for preparing high-quality single crystal domain two-dimensional material by regulating and controlling cavity pressure

A two-dimensional material, high-quality technology, applied in the direction of polycrystalline material growth, single crystal growth, single crystal growth, etc., to achieve the effects of easy popularization and application, compatible growth equipment, and reduced preparation costs

Active Publication Date: 2022-01-28
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, although researchers have made some progress in the field of exploring the growth mechanism of pressure on two-dimensional materials, there are still challenges in the study of dynamic pressure changes between low pressure and normal pressure.

Method used

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  • Method for preparing high-quality single crystal domain two-dimensional material by regulating and controlling cavity pressure
  • Method for preparing high-quality single crystal domain two-dimensional material by regulating and controlling cavity pressure
  • Method for preparing high-quality single crystal domain two-dimensional material by regulating and controlling cavity pressure

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Embodiment 1

[0060] A method for preparing single-crystal domain graphene by regulating furnace pressure, comprising steps as follows:

[0061] (1) Select metal copper Cu as the substrate, and electrochemically polish it, wash it with deionized water, and heat it at 200°C for 30min for pre-oxidation treatment;

[0062] (2) Place the pretreated Cu substrate in the reaction furnace chamber, and then vacuumize the furnace chamber to 5×10 -5 Pa; close the vacuum pump unit, feed the inert gas Ar, until the furnace chamber pressure is 1 atm, then open the vacuum pump unit, pump and charge the furnace chamber, repeat 3 times, and carry out vacuum treatment to the furnace chamber;

[0063] (3) Introduce Ar, maintain the pressure of the furnace body at 0.5atm, raise the temperature to 1050°C in an argon atmosphere of 500 sccm (milliliters per minute), and then infuse H 2 (20 sccm), adjust the furnace pressure to 0.75 atm, and pre-anneal the substrate for 60 min.

[0064] (4) Adopt one-thousandth ...

Embodiment 2

[0075] A preparation of high-quality single-crystal two-dimensional MoSe 2 The material method comprises the following steps:

[0076] (1) Evaporate 300nm thick SiO on a commercial Si wafer 2 layer, and is evaporated with SiO 2 One side of the layer is polished as a substrate;

[0077] (2) Treated Si / SiO 2 The substrate is placed in the furnace chamber, and the polishing surface is aligned with MoO 3 Precursor; the Se powder precursor is placed in front of the substrate with a distance of 20cm;

[0078] (3) The furnace cavity is vacuumed, and the vacuum degree is not higher than 5×10 -5 Pa; turn off the vacuum pump unit, feed inert background gas until the furnace cavity pressure is 1 atm, then turn on the vacuum pump unit, pump and charge the furnace cavity, repeat 3 times, and carry out vacuum treatment to the furnace cavity;

[0079](4) Pass 50sccm Ar and 5sccm H 2 The mixed gas is used as the carrier gas, the furnace pressure is adjusted to 0.5atm, and different tem...

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Abstract

The invention belongs to the technical field of preparation of two-dimensional materials, and particularly relates to a method for preparing a high-quality single crystal domain two-dimensional material by regulating and controlling cavity pressure. The method comprises the following steps: putting a substrate in a reaction furnace cavity, and carrying out vacuum cleaning; introducing current-carrying gas, adjusting the pressure intensity of the furnace cavity to be low pressure, and increasing the temperature to a precursor decomposition temperature; introducing reaction gas, keeping the pressure intensity of the cavity at low pressure, and carrying out nucleation and preliminary transverse growth of the two-dimensional material; increasing the pressure intensity of the cavity to normal pressure for rapid growth, and then decreasing the pressure intensity of the cavity for stable growth; and finally, cooling in a current-carrying gas atmosphere to obtain the large-size single crystal domain two-dimensional material with the regular morphology. According to the invention, by adjusting the pressure intensity of the cavity in the growth stage, the component transportation in the CVD system is improved, and the interaction among substances is enhanced, so that the high-quality and large-size single crystal domain two-dimensional material is obtained.

Description

technical field [0001] The invention belongs to the technical field of preparation of two-dimensional materials, and in particular relates to a method for preparing high-quality single crystal domain two-dimensional materials by regulating cavity pressure. Background technique [0002] The information disclosed in this background section is only intended to increase the understanding of the general background of the present invention, and is not necessarily taken as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to those skilled in the art. [0003] The advent of graphene in 2004 broke the theory that thermodynamic fluctuations do not allow any two-dimensional crystals to exist at non-absolute zero temperatures, and set off a wave of research on graphene materials by scientific researchers. Because of its unique electrical, optical, magnetic and other physical properties, it has rapidly driven the research and develop...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/64C30B29/02C30B29/46C30B25/00
CPCC30B29/64C30B29/02C30B29/46C30B25/00
Inventor 孙丽王鹏张雪国星于法鹏李妍璐赵显
Owner SHANDONG UNIV
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