Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor packaging structure

A packaging structure and semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., can solve the problems of liquefaction outflow, inability to form thin films, and high cost, so as to improve thermal conductivity and improve heat dissipation efficiency. , Improve the effect of cost advantage

Pending Publication Date: 2022-01-28
ADVANCED SEMICON ENG INC
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, taking gallium (Ga) with a low melting point (about 29.76°C) as an example, its texture is soft at room temperature, and it is easy to liquefy and cannot form a thin film when it is pressed, and the TIM itself needs to have a certain height (about 80-100um ), if all gallium is used as the TIM, the cost is relatively expensive, and if it exceeds the melting point, it will liquefy and flow out, which cannot be effectively applied, resulting in low yield

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor packaging structure
  • Semiconductor packaging structure
  • Semiconductor packaging structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The specific implementation manners of the present disclosure will be described below in conjunction with the accompanying drawings and examples. Those skilled in the art can easily understand the technical problems solved by the present disclosure and the technical effects produced through the contents recorded in this specification. It should be understood that the specific embodiments described here are only used to explain related inventions, rather than to limit the invention. In addition, for the convenience of description, only the parts related to the related invention are shown in the drawings.

[0032] It should be noted that the structures, proportions, sizes, etc. shown in the accompanying drawings of the specification are only used to match the content recorded in the specification for the understanding and reading of those skilled in the art, and are not intended to limit the implementation of the present disclosure. There are limited conditions, so it has...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

According to a semiconductor packaging structure, metal layers are formed on the two end faces of a metal sheet (such as copper foil) serving as a carrier in an electroplating mode, the metal layers can react with the metal sheet in the heating and pressurizing process to generate an intermetallic compound (IMC), and due to the fact that the melting point of the intermetallic compound (such as CuGa2) is higher than that of the metal layer (such as Ga) and the intermetallic compound is in a solid state, a Thermal Interface Material (TIM) bonding a chip to a heat dissipation structure is integrally formed. And the metal sheet is used as the carrier, so that the requirement that the height of the TIM exceeds 100 [mu] m can be met, and compared with the TIM made of a traditional high polymer material, the thermal conductivity coefficient can be improved by about 300% or above, and the heat dissipation efficiency of the chip is greatly improved.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, and in particular to semiconductor packaging structures. Background technique [0002] With the multi-functional development of high-end chips, their thermal design power (Thermal Design Power, TDP) continues to rise. The so-called TDP refers to the maximum heat that a chip can generate when it executes an actual application program. When matching, the heat sink can effectively cool the chip. The larger the TDP, the greater the heat generated per unit time when the chip is working. For the heat dissipation system, TDP is the minimum standard for heat dissipation design, that is, the heat dissipation The system must be able to dissipate at least the amount of heat per unit time indicated by the TDP value. [0003] The heat dissipation system will adhere thermal interface material (TIM) with high thermal conductivity to the surface of the chip to dissipate the heat generated by the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L23/367H01L23/373
CPCH01L23/367H01L23/3736
Inventor 王缮柏高金利徐安萱
Owner ADVANCED SEMICON ENG INC