Silicon carbide joint and its metal penetration connection method

A technology of metal infiltration and connection method, which is applied in the field of ceramic material connection, can solve the problems of lower connection strength, use of solder under low temperature conditions, and accelerate the decomposition of the MAX phase of the intermediate layer, so as to achieve lower requirements, lower preparation conditions, and high-strength connection gas. tightness effect
CN114031415BActive Publication Date: 2022-08-02CHINA NUCLEAR POWER TECH RES INST CO LTD +2
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
CHINA NUCLEAR POWER TECH RES INST CO LTD
Publication Date
2022-08-02

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Abstract

The invention discloses a silicon carbide joint and a metal penetration connection method thereof. The metal penetration connection method includes the following steps: S1, preparing a first metal raw material and a second metal raw material to form a connecting material; S2, disposing the connecting material in a Between the connection surfaces of the two silicon carbide pieces, a sandwich structure is formed with the two silicon carbide pieces; S3, the sandwich structure is placed in a sintering environment with a metal phase and sintered; during the sintering process, the metal phase infiltrates into the connecting material and fill in the pores generated in the connecting material; S4, after sintering, the connecting material is densified to form a connecting layer, and two silicon carbide parts are connected to form a silicon carbide joint. The metal infiltration connection method of the silicon carbide joint of the present invention penetrates into the connecting material with the metal phase, realizes the densification of the connecting material, obtains a high-strength connection and a silicon carbide joint with good air tightness, and reduces the requirements on the shape and structure of silicon carbide. .
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Description

technical field

[0001] The invention relates to the technical field of ceramic material connection, in particular to a silicon carbide joint and a metal penetration connection method thereof. Background technique

[0002] Silicon carbide ceramics have high melting point, excellent mechanical, thermal and corrosion resistance properties, making them widely used in vehicles, marine engineering, nuclear energy, aerospace and other fields. The above applications not only require silicon carbide to have good high temperature resistance, but also have high requirements for its shape and structure. The brazing connection can be carried out under low temperature and low pressure conditions, which can meet the requirements of the shape and structure of silicon carbide, but most of the brazing materials can only be used under low temperature conditions.

[0003] Current research has found that Ti-Si brazing joints have good high temperature resistance, but this joint technology can o...

Claims

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