Silicon carbide joint and its metal penetration connection method

Abstract

The invention discloses a silicon carbide joint and a metal penetration connection method thereof. The metal penetration connection method includes the following steps: S1, preparing a first metal raw material and a second metal raw material to form a connecting material; S2, disposing the connecting material in a Between the connection surfaces of the two silicon carbide pieces, a sandwich structure is formed with the two silicon carbide pieces; S3, the sandwich structure is placed in a sintering environment with a metal phase and sintered; during the sintering process, the metal phase infiltrates into the connecting material and fill in the pores generated in the connecting material; S4, after sintering, the connecting material is densified to form a connecting layer, and two silicon carbide parts are connected to form a silicon carbide joint. The metal infiltration connection method of the silicon carbide joint of the present invention penetrates into the connecting material with the metal phase, realizes the densification of the connecting material, obtains a high-strength connection and a silicon carbide joint with good air tightness, and reduces the requirements on the shape and structure of silicon carbide. .

Description

technical field [0001] The invention relates to the technical field of ceramic material connection, in particular to a silicon carbide joint and a metal penetration connection method thereof. Background technique [0002] Silicon carbide ceramics have high melting point, excellent mechanical, thermal and corrosion resistance properties, making them widely used in vehicles, marine engineering, nuclear energy, aerospace and other fields. The above applications not only require silicon carbide to have good high temperature resistance, but also have high requirements for its shape and structure. The brazing connection can be carried out under low temperature and low pressure conditions, which can meet the requirements of the shape and structure of silicon carbide, but most of the brazing materials can only be used under low temperature conditions. [0003] Current research has found that Ti-Si brazing joints have good high temperature resistance, but this joint technology can o...

AI Technical Summary

Problems solved by technology

Brazing connection can be carried out under low temperature and low pressure conditions, which can meet the shape and structure requirements of silicon carbide, but most solders can only be used under low temperature conditions

[0003] The current research has found that Ti-Si brazing connection has good high temperature resistance, but this connection technology can only prepare high-strength silicon carbide joints under high vacuum conditions. When connecting in a graphite heating furnace, the MAX phase of the middle layer is accelerated. Decomposition, the connection strength is greatly reduced, which limits the application of this technology in the field of silicon carbide connection

In addition, when Ti-Si brazing connects silicon carbide, the requirements for the processing plane of silicon carbide are relatively strict, and there are requirements for the material of silicon carbide itself, which requires free carbon in the silicon carbide material, and high-purity silicon carbide is not conducive to the development of high-strength silicon carbide joints. preparation, thus limiting the application in the field of silicon carbide connections

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