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Silicon carbide joint and metal penetration connection method thereof

A technology of metal infiltration and connection method, which is applied in the field of ceramic material connection, can solve the problems of lower connection strength, use of solder under low temperature conditions, and accelerate the decomposition of the MAX phase of the middle layer, so as to achieve lower requirements, lower preparation conditions, and high-strength connection gas. tightness effect

Active Publication Date: 2022-02-11
CHINA NUCLEAR POWER TECH RES INST CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Brazing connection can be carried out under low temperature and low pressure conditions, which can meet the shape and structure requirements of silicon carbide, but most solders can only be used under low temperature conditions
[0003] The current research has found that Ti-Si brazing connection has good high temperature resistance, but this connection technology can only prepare high-strength silicon carbide joints under high vacuum conditions. When connecting in a graphite heating furnace, the MAX phase of the middle layer is accelerated. Decomposition, the connection strength is greatly reduced, which limits the application of this technology in the field of silicon carbide connection
In addition, when Ti-Si brazing connects silicon carbide, the requirements for the processing plane of silicon carbide are relatively strict, and there are requirements for the material of silicon carbide itself, which requires free carbon in the silicon carbide material, and high-purity silicon carbide is not conducive to the development of high-strength silicon carbide joints. preparation, thus limiting the application in the field of silicon carbide connections

Method used

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  • Silicon carbide joint and metal penetration connection method thereof
  • Silicon carbide joint and metal penetration connection method thereof
  • Silicon carbide joint and metal penetration connection method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053]Metal Ti foil (thickness 10 μm, purity 99.99%) and Si powder (particle size 1 μm, purity 99.999%) were used as raw materials for connecting materials; after the metal Ti foil was polished with sandpaper, Si powder was applied on both sides of the metal Ti foil. On the other hand, the molar ratio of metal Ti foil and Si powder is 2:3; the above metal Ti foil and Si powder are placed between silicon carbide to form a sandwich structure. In the graphite crucible, the above sandwich structure is placed around the iron, cobalt and nickel blocks, and then the graphite crucible is placed in a sintering furnace for sintering connection. During sintering, the temperature was raised to 1500°C at 20°C / min, kept for 1h, the sintering atmosphere was vacuum, and silicon carbide joints were obtained after sintering.

[0054] The electron scanning electron microscope picture of the silicon carbide joint obtained above is as follows figure 1 shown. From figure 1 It can be seen that th...

Embodiment 2

[0057] Metal Mo (thickness 20 μm, purity 99.99%) and Si powder (particle size 5 μm, purity 99.999%) are used as raw materials for connecting materials; the connection of silicon carbide is realized according to the method in Example 1, wherein during sintering, the sintering temperature is 1600 ℃, heat preservation for 2 hours, and the sintering atmosphere is argon, and a silicon carbide joint with a dense connection layer is obtained.

[0058] For the silicon carbide joint prepared above, the thickness of the connecting layer is 60 μm. In the shear strength test, the shear strength is 120MPa at room temperature and 150MPa at a high temperature of 1200°C. SiC joints have a leak rate of 1 x 10 -9 Pa·L / s.

Embodiment 3

[0060] Metal Ta (20 μm in thickness, 99.99% in purity) and Al powder (20 μm in particle size, 99.999% in purity) are used as raw materials for connecting materials; the connection of silicon carbide is realized according to the method in Example 1, wherein during sintering, the sintering temperature is 1700 ℃, heat preservation for 2 hours, and the sintering atmosphere is argon, and a silicon carbide joint with a dense connection layer is obtained.

[0061] For the silicon carbide joint prepared above, the thickness of the connecting layer is 50 μm. In the shear strength test, the shear strength is 150MPa at room temperature and 200MPa at a high temperature of 1200°C. SiC joints have a leak rate of 1 x 10 -8 Pa·L / s.

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Abstract

The invention discloses a silicon carbide joint and a metal penetration connection method thereof. The metal penetration connection method comprises the following steps that: S1, preparing a first metal raw material and a second metal raw material are prepared to form a connection material; S2, the connecting material is arranged between the connecting faces of two silicon carbide parts, and the connecting material and the two silicon carbide parts form a sandwich structure; S3, the sandwich structure is placed in a sintering environment with a metal phase and sintered; and in the sintering process, the metal phase permeates into the connecting material and fills air holes generated in the connecting material; and S4, after sintering, the connecting material is densified to form a connecting layer, and the two silicon carbide parts are connected to form the silicon carbide joint. According to the metal permeation connection method of the silicon carbide joint, the metal phase permeates into the connection material, densification of the connection material is achieved, the silicon carbide joint with high-strength connection and good air tightness is obtained, and the requirements for the shape structure and the like of silicon carbide are lowered.

Description

technical field [0001] The invention relates to the technical field of ceramic material connection, in particular to a silicon carbide joint and a metal penetration connection method thereof. Background technique [0002] Silicon carbide ceramics have a high melting point, excellent mechanical, thermal and corrosion resistance properties, making them widely used in vehicles, marine engineering, nuclear energy, aerospace and other fields. The above applications not only require silicon carbide to have good high temperature resistance, but also have high requirements for its shape and structure. Brazing connection can be carried out under low temperature and low pressure conditions, which can meet the shape and structure requirements of silicon carbide, but most solders can only be used under low temperature conditions. [0003] The current research has found that Ti-Si brazing connection has good high temperature resistance, but this connection technology can only produce hi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B37/00
CPCC04B37/003C04B2237/12C04B2237/121C04B2237/365
Inventor 吴利翔薛佳祥廖业宏任啟森翟剑晗张永栋张显生
Owner CHINA NUCLEAR POWER TECH RES INST CO LTD
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