Ridge-type waveguide high-power semiconductor laser chip and preparation method thereof

A ridge-shaped waveguide and N-type semiconductor technology, which is applied in the direction of semiconductor lasers, optical waveguide semiconductor structures, lasers, etc., can solve problems affecting the performance of lasers, achieve the effects of improving optical field distribution, reducing threshold current, and increasing effective gain

Pending Publication Date: 2022-02-11
欧润光电科技(苏州)有限公司
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Problems solved by technology

However, for high-power semiconductor laser chips with longer cavity length and fewer quantum wells, the addition of etching barrier layer 5 will significantly affect the performance of the laser

Method used

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  • Ridge-type waveguide high-power semiconductor laser chip and preparation method thereof
  • Ridge-type waveguide high-power semiconductor laser chip and preparation method thereof
  • Ridge-type waveguide high-power semiconductor laser chip and preparation method thereof

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Embodiment Construction

[0041] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, the following will clearly and completely describe the technical solutions of the embodiments of the present invention in conjunction with the drawings of the embodiments of the present invention. Apparently, the described embodiments are some, not all, embodiments of the present invention. Based on the described embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein shall have the usual meanings understood by those skilled in the art to which the present invention belongs. As used herein, "first", "second" and similar words do not imply any order, quantity or importance, but are used only to distinguish different components. "Compr...

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Abstract

The invention discloses a ridge-type waveguide high-power semiconductor laser chip which comprises an N-type substrate, an N-type semiconductor layer, an active light-emitting layer, a P-type semiconductor layer, an etching barrier layer and a ridge-type waveguide layer which are sequentially arranged from bottom to top. The active light-emitting layer at least comprises two groups of quantum wells; the two groups of quantum wells comprise a first group of quantum wells close to the etching barrier layer and a second group of quantum wells far away from the etching barrier layer; the energy band gap of the first group of quantum wells is smaller than the energy band gap of the second group of quantum wells. According to the high-power semiconductor laser, another group of quantum wells with different energy band gaps are added into a traditional single quantum well structure, so that the threshold current of the high-power semiconductor laser is reduced, and the luminous efficiency of the high-power semiconductor laser is improved. The invention also discloses a preparation method of the ridge waveguide high-power semiconductor laser chip.

Description

technical field [0001] The invention relates to a semiconductor laser chip structure, in particular to a ridge waveguide high-power semiconductor laser chip. The invention also relates to a method for preparing a ridge waveguide high-power semiconductor laser chip. Background technique [0002] High-power semiconductor laser chips are widely used in the fields of communication and industrial processing. In the field of optical communication, along with the huge increase in the demand for bandwidth, the development of higher-speed transmission technology has become inevitable, and one of the important directions is the integration of silicon photonics based on silicon-based materials and processes. However, since the silicon material itself is not a good light-emitting material, it is necessary to integrate the high-power laser chip based on the III-V semiconductor with the silicon-based modulator and other chips, so the high-power semiconductor laser chip is 400G / 800G or ev...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/22H01S5/34
CPCH01S5/22H01S5/3425H01S5/3407
Inventor 王中和方祖捷
Owner 欧润光电科技(苏州)有限公司
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