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Method for preparing silicon carbide crystal by taking single gas as source gas

A silicon carbide and source gas technology, applied in chemical instruments and methods, single crystal growth, crystal growth, etc., can solve problems such as high cracking temperature, low gas stability and easy spontaneous combustion, and achieve the effect of risk reduction

Active Publication Date: 2022-02-15
江苏超芯星半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a growth method using methyl silane to prepare silicon carbide crystals, to solve the gas source that needs two components in the prior art, SiH 4 Low gas stability, easy spontaneous combustion, and high cracking temperature

Method used

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  • Method for preparing silicon carbide crystal by taking single gas as source gas

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Embodiment 1

[0031] In this embodiment, methylsilane is selected as the source gas, and helium is used as the carrier gas.

[0032] Place the prepared seed crystal, crucible and heat preservation material in the furnace cavity. Start the crystal growth program, wash the furnace, check for leaks, and repeat 2 times. Pass methylsilane into the low-temperature chamber in the furnace, set the flow rate to 1slm, and adjust the flow rate of He to 6slm. Open the pressure control butterfly valve to keep the pressure in the equipment at 100mbar. By ramping up the temperature, the temperature of the low-temperature chamber is 550°C, the temperature of the high-temperature chamber is 2250°C, and the temperature of the crystallization chamber is 2200°C. By controlling the reaction gas valve, adjust the flow rate of the reaction gas to 100 sccm. During the crystal growth process, maintain this parameter for crystal growth for 50h. After the crystal growth program is completed, start the cooling pro...

Embodiment 2

[0034] In this embodiment, trimethylchlorosilane is selected as the source gas, and argon is used as the carrier gas.

[0035]Place the prepared seed crystal, crucible and heat preservation material in the furnace cavity. Start the crystal growth program, wash the furnace, check for leaks, and repeat 2 times. Pass trimethylchlorosilane into the low-temperature chamber in the furnace, set the flow rate to 10slm, and adjust the flow rate of Ar to 10slm. Open the pressure control butterfly valve to keep the pressure in the equipment at 500mbar. The temperature of the low temperature chamber is 620°C, the temperature of the high temperature chamber is 2450°C, and the temperature of the crystallization chamber is 2100°C. By controlling the reaction gas valve, adjust the flow rate of the reaction gas to 500 sccm. During the crystal growth process, maintain this parameter for crystal growth for 20h. After the crystal growth program is completed, start the cooling program, inflate...

Embodiment 3

[0037] In this embodiment, hexamethyldisilane is selected as the source gas, and hydrogen and argon are used as the carrier gas.

[0038] Place the prepared seed crystal, crucible and heat preservation material in the furnace cavity. Start the crystal growth program, wash the furnace, check for leaks, and repeat 3 times. Pass hexamethyldisilane into the low-temperature chamber in the furnace, set the flow rate to 35 slm, and adjust the flow rate of Ar to 50 slm. Open the pressure control butterfly valve to keep the pressure in the equipment at 1000mbar. The temperature of the low temperature chamber is 1000°C, the temperature of the high temperature chamber is 2300°C, and the temperature of the crystallization chamber is 2000°C. By controlling the reaction gas valve, adjust the flow rate of the reaction gas to 10 sccm. During the crystal growth process, maintain this parameter for crystal growth for 35h. After the crystal growth program is completed, start the cooling prog...

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Abstract

The invention discloses a method for preparing silicon carbide crystals by taking single gas as source gas. Equipment adopted by the method comprises a low-temperature cavity, a high-temperature cavity and a crystallization cavity which are sequentially connected through gas pipelines. The method comprises the following steps: (1) preparing silane derivative gas or chlorosilane derivative gas as source gas, introducing the source gas into a low-temperature cavity, and cracking the source gas; (2) introducing a current-carrying gas through an inlet gas pipeline, bringing the cracked product in the low-temperature cavity into a high-temperature cavity, and reacting CxHy or CmHnClo with Si in the high-temperature cavity to obtain a SialphaCbeta; and (3) entraining the SialphaCbeta gas in the high-temperature cavity into the crystallization cavity by the current-carrying gas, depositing and crystallizing SialphaCbeta gas molecules on the surface of the silicon carbide seed crystal, and finally generating the silicon carbide crystal. According to the invention, the silicon carbide crystal is grown only by using single gas, is more stable than silane, and does not spontaneously ignite in the air, so that the use and maintenance cost and risk are greatly reduced.

Description

technical field [0001] The invention belongs to the technical field of silicon carbide crystals, in particular to a method for preparing silicon carbide crystals using silane derivative gas as a single source gas. Background technique [0002] The commercially used silicon carbide single crystal growth methods are mainly divided into physical vapor transport (PVT) and high temperature chemical vapor deposition (HTCVD). High-temperature chemical vapor deposition (HTCVD) uses two or more gases as raw materials. The raw materials enter through the gas inlet at the bottom of the crucible. Under the growth temperature and pressure, they are deposited on the surface of the seed crystal for crystal growth. The residual gas passes through the crucible The pores at the top flow out. In the patent application of Jiangsu Chaoxinxing Semiconductor Co., Ltd. published on July 17, 2020, "a method for preparing a large-scale kilogram-scale silicon carbide single crystal (publication numbe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B25/02C30B25/08C30B25/14
CPCC30B29/36C30B25/02C30B25/08C30B25/14Y02P70/50
Inventor 袁振洲刘欣宇
Owner 江苏超芯星半导体有限公司
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