Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Dual-surface acoustic wave filter, dual-frequency assembly and manufacturing method of dual-surface acoustic wave filter

A surface acoustic wave and filter technology, applied to electrical components, impedance networks, etc., can solve the problems of high processing cost, poor reliability at the junction, and signal loss, etc., and achieve low design difficulty, optimal device performance, and simple manufacturing process Effect

Pending Publication Date: 2022-02-25
北京超材信息科技有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the two single-pass band surface acoustic wave filters are located on separate substrates, they are generally realized by splicing composite substrates, which will lead to poor reliability at the junction and high processing costs.
At the same time, the two single-pass SAW filters use switches for channel switching, the signal may be lost, and the reliability of the dual-frequency components is poor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Dual-surface acoustic wave filter, dual-frequency assembly and manufacturing method of dual-surface acoustic wave filter
  • Dual-surface acoustic wave filter, dual-frequency assembly and manufacturing method of dual-surface acoustic wave filter
  • Dual-surface acoustic wave filter, dual-frequency assembly and manufacturing method of dual-surface acoustic wave filter

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] A specific embodiment of the present invention, such as figure 2 As shown, a structural schematic diagram of a double surface acoustic wave filter is disclosed, and the double surface acoustic wave filter includes:

[0052] A piezoelectric substrate 1, on which a first filter element and a second filter element are arranged. The first filter element responds to the first frequency of the surface acoustic wave, the first filter element includes a plurality of first IDT electrode fingers 21, the first IDT electrode fingers 21 have a first metal film with a first thickness, and a plurality of first IDT electrodes The fingers 21 are mounted on the piezoelectric substrate along the propagation direction of the surface acoustic wave.

[0053] Further, the second filter element responds to the second frequency of the acoustic surface, the second filter element includes a plurality of second IDT electrode fingers 22, the second IDT electrode fingers have a second metal film w...

Embodiment 2

[0070] A specific embodiment of the present invention also discloses a structural schematic diagram of a double surface acoustic wave filter, as Figure 10 As shown, the dual surface acoustic wave filter includes:

[0071] The first IDT electrode fingers 21 are formed on the upper surface of the piezoelectric single crystal substrate, and the second IDT electrode fingers 22 are formed on the lower surface of the piezoelectric single crystal substrate. The entire IDT electrode fingers are arranged in concavo-convex manner on the piezoelectric single crystal substrate. The depth of the concavo-convex structure is less than or equal to the depth of the piezoelectric single crystal substrate. Specifically, the arrangement of the concave-convex structure corresponding to the surface IDT electrodes is implemented to be or alternately arranged with the IDT electrodes, or every two concave-convex structures correspond to the width of one IDT electrode finger, thereby reducing inserti...

Embodiment 3

[0074] A specific embodiment of the present invention, such as Figure 11 As shown, a structural schematic diagram of another double surface acoustic wave filter is disclosed. The double surface acoustic wave filter includes a piezoelectric substrate, and the piezoelectric substrate includes:

[0075] The piezoelectric single crystal film 31, the first filter element and the second filter element are located on the same surface of the piezoelectric single crystal film.

[0076] The bonding layer 32 is disposed on the surface of the piezoelectric single crystal thin film away from the first filter element. The bonding layer has a positive temperature compensation coefficient TCF, and can be realized as silicon dioxide, for example. The supporting substrate 33 is disposed on the surface of the bonding layer 32 away from the piezoelectric single crystal thin film, and the supporting substrate is a single crystal silicon substrate. Thus, the dual surface acoustic wave filter can ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a dual surface acoustic wave filter. The dual surface acoustic wave filter comprises a piezoelectric substrate; a first filter element and a second filter element are arranged on the same piezoelectric substrate; the first filtering element responds to a first frequency of the surface acoustic wave, the first filtering element comprises a plurality of first IDT electrodes, and the first IDT electrodes are provided with first metal films with first thicknesses; the second filtering element responds to a second frequency of the sound surface, the second filtering element comprises a plurality of second IDT electrodes, and the second IDT electrodes are provided with second metal thin films of a second thickness; the first frequency is different from the second frequency; the first thickness is different from the second thickness; and a surface acoustic wave propagation path of the first filter element is parallel to or intersects with a surface acoustic wave propagation path of the second filter element. Therefore, according to the dual-surface acoustic wave filter and the manufacturing method thereof provided by the invention, the dual-surface acoustic wave filter with high power tolerance and high reliability can be realized.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a dual surface acoustic wave filter, a dual frequency component and a manufacturing method thereof. Background technique [0002] In recent years, with the rapid development of wireless communication systems, various terminal devices have widely supported various communication protocols such as 2G, 3G, LTE, Wi-Fi, and GPS. In order to achieve this goal, in the prior art, the radio frequency front-end of the communication equipment is composed of multiple radio frequency circuits, and each radio frequency circuit includes independent filters, amplifiers and other components, and has different center frequencies and bandwidths. Use RF switches to select filters with different center frequencies for communication. Although this solution can support simultaneous work of multiple communication standards, it increases the volume, power consumption and cost of the communicati...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/64H03H3/10H03H9/145
CPCH03H9/64H03H3/10H03H9/145
Inventor 王阳吴洋洋曹庭松陆彬
Owner 北京超材信息科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com