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Raw material preparation method and equipment for preventing brazing layering of silicon nitride integrated circuit board

An integrated circuit, silicon nitride technology, applied in the field of circuit board brazing, can solve the problems of electronic equipment failure, virtual welding, etc., and achieve the effect of improving the bonding force, increasing the contact area, and reducing the probability of brazing delamination

Inactive Publication Date: 2022-03-01
LIAONING YIFEI TECH
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Problems solved by technology

[0004] After the existing silicon nitride ceramic substrate is brazed, in the process of use, due to the heating of the components, the expansion between the substrate and the ceramic body will occur, which will cause delamination between the circuit board and the brazing layer, resulting in the phenomenon of virtual welding There is a problem with electronic equipment malfunctioning

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  • Raw material preparation method and equipment for preventing brazing layering of silicon nitride integrated circuit board
  • Raw material preparation method and equipment for preventing brazing layering of silicon nitride integrated circuit board
  • Raw material preparation method and equipment for preventing brazing layering of silicon nitride integrated circuit board

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Embodiment Construction

[0027] In describing the present invention, it is to be understood that the terms "longitudinal", "transverse", "upper", "lower", "top", "bottom", "inner", "outer" and the like indicate an orientation or position The relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, therefore It should not be construed as a limitation of the present invention.

[0028] In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a feature defined as "first" and "second" may explicitly or implicitly include one or more of these f...

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Abstract

The invention discloses a raw material preparation method and equipment for preventing brazing layering of a silicon nitride integrated circuit board, relates to the technical field of circuit board brazing, and mainly solves the problem that after a circuit board of a silicon nitride ceramic substrate is brazed by an existing brazing raw material, the circuit board is easily subjected to insufficient soldering layering due to heating. According to the invention, an active element Zr is added mainly by improving brazing raw materials, the active element Zr can react with connected ceramic to realize wetting of the ceramic, the ceramic particles added with B4C can reduce the thermal expansion coefficient of the brazing filler metal, the thermal expansion coefficient of the brazing filler metal is better matched with the thermal expansion coefficient of a ceramic substrate, and the wetting effect is better. The physical lines are added to the silicon nitride ceramic substrate, so that the contact area is increased, the bonding force of the bonding surface is better improved, and the probability of brazing layering is greatly reduced when the brazed circuit board is in a heated state.

Description

technical field [0001] The invention relates to the technical field of circuit board brazing, in particular to a raw material preparation method and equipment for preventing the brazing delamination of silicon nitride integrated circuit boards. Background technique [0002] Silicon nitride ceramics have many excellent properties such as high hardness, high strength, small thermal expansion coefficient, small high temperature creep, good oxidation resistance, good thermal corrosion performance, small friction coefficient, and similar to oil-lubricated metal surfaces. Good structural ceramic material. The theoretical thermal conductivity of single crystal silicon nitride can reach 400W / (m.k), which has the potential to become a substrate with high thermal conductivity. In addition, the thermal expansion coefficient of silicon nitride is about 3.0 times 10-6 / degree Celsius, which matches well with materials such as SI, SIC and caas, which makes silicon nitride ceramic circuit ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B37/00C04B41/91
CPCC04B37/00C04B41/91C04B41/53C04B2237/02C04B2237/30C04B2237/52C04B2237/64
Inventor 田鑫徐涛伊恒彬张莹王婷婷常艳杰
Owner LIAONING YIFEI TECH
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