Semiconductor structure and forming method thereof

A semiconductor and epitaxial layer technology, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of small forward current and high surface electric field, reduce internal resistance, increase contact area, and increase surge The effect of current

Pending Publication Date: 2022-03-08
飞锃半导体(上海)有限公司 +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, there are still many defects in the electrical properties of the current junction barrier Schottky diodes, such as high surface electric field, small forward current, etc.

Method used

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  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof

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Embodiment Construction

[0036]The following description provides specific application scenarios and requirements of the application, with the purpose of enabling those skilled in the art to manufacture and use the contents of the application. Various local modifications to the disclosed embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other embodiments and embodiments without departing from the spirit and scope of the application. application. Thus, the application is not limited to the embodiments shown, but is to be accorded the widest scope consistent with the claims.

[0037] refer to figure 1 , a junction barrier Schottky diode, comprising an N-type substrate 1, an N-type epitaxial layer 2 is formed on the surface of the N-type substrate 1, and a P-type epitaxial layer is formed from the surface of the N-type epitaxial layer 2 to the inside. In the heavily doped region 3, a P-type lightly doped region 4 is formed at t...

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Abstract

The invention provides a semiconductor structure and a forming method thereof, and the semiconductor structure comprises a substrate which comprises a first epitaxial layer, and a part of the first epitaxial layer comprises a second epitaxial layer; the deep trap protection columns separately extend from the surface of the first epitaxial layer to the interior of the first epitaxial layer and extend to the lower part of the second epitaxial layer in the width direction, and the thickness of the first epitaxial layer between the deep trap protection columns and the substrate is 6-12 microns; the doping type of the well contact layer is the same as that of the deep well protection column, the well contact layer extends from the surface of the deep well protection column to the deep well protection column, and the side wall and the bottom of the well contact layer are surrounded by the deep well protection column; and the metal layer is positioned on the surface of the well contact layer and the side wall and the surface of the second epitaxial layer. According to the semiconductor structure and the forming method thereof, the surface electric field of a device can be reduced, the forward current is increased, and the reliability of the device is improved.

Description

technical field [0001] The present application relates to the field of semiconductor devices, in particular to a semiconductor structure and a method for forming the same. Background technique [0002] Among high-voltage devices, silicon carbide diodes have been extensively studied due to their better electrical performance. Silicon carbide diodes include Schottky barrier diodes (SBD) and junction barrier Schottky diodes (JBS), among which Schottky barrier diodes have a large reverse leakage current caused by the Schottky barrier reduction effect The problem, and as the reverse bias increases, the Schottky barrier decreases more seriously. The junction barrier Schottky diode can improve the Schottky barrier lowering effect without affecting the forward performance of the device. [0003] However, there are still many defects in the electrical properties of the current junction barrier Schottky diodes, such as high surface electric field and small forward current. Content...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): H01L29/06H01L29/872H01L21/329
CPCH01L29/0611H01L29/0684H01L29/872H01L29/66143
Inventor李浩南张永杰周永昌黄晓辉董琪琪
Owner飞锃半导体(上海)有限公司