Manufacturing method of integrated circuit and integrated circuit

A technology of integrated circuits and manufacturing methods, applied in the direction of circuits, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as multiple reliability, achieve the effects of improving production throughput, improving efficiency, and reducing latch-up effects

Pending Publication Date: 2022-03-11
HANGZHOU SILAN MICROELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The conventional BiCMOS process is still based on the ordinary lateral PN jun

Method used

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  • Manufacturing method of integrated circuit and integrated circuit
  • Manufacturing method of integrated circuit and integrated circuit
  • Manufacturing method of integrated circuit and integrated circuit

Examples

Experimental program
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Embodiment Construction

[0038] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, like elements are designated by like reference numerals. For the sake of clarity, various parts in the figures have not been drawn to scale. Additionally, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be depicted in one figure.

[0039] It will be understood that, in describing the structure of a device, when a layer or region is referred to as being "on" or "over" another layer or region, it can be directly on the other layer or region, or Other layers or regions are also included between it and another layer, another region. Also, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, or region.

[0040] If it is to describe the situation directly on another layer or another area, the expression "directly...

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PUM

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Abstract

The invention discloses a manufacturing method of an integrated circuit and the integrated circuit. The manufacturing method comprises the following steps: forming an N-type buried layer on a substrate through ion implantation; forming an epitaxial layer on the N-type buried layer; forming an active region and a passive region in the epitaxial layer; forming a plurality of field oxide layers in the passive region; forming a plurality of low-voltage N-type wells and a plurality of low-voltage P-type wells in the epitaxial layer; forming a plurality of gate structures on the low-voltage N-type well, the low-voltage P-type well and the field oxide layer; and forming a plurality of deep groove isolation structures, wherein the deep groove isolation structures penetrate through the epitaxial layer and the N-type buried layer and extend into the substrate. According to the manufacturing method of the integrated circuit and the integrated circuit, the latch-up effect of the integrated circuit is reduced by adopting a process of a back-end deep groove isolation structure, so that the reliability of the integrated circuit is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an integrated circuit manufacturing method and the integrated circuit. Background technique [0002] BiCMOS (Bipolar-CMOS) technology is a monolithic integrated bipolar transistor (Bipolar junction transistor, BJT) and CMOS (complementary metal oxide semiconductor) process technology. This process is generally based on the process of bipolar transistors with epitaxy embedded in CMOS devices, so as to realize abundant devices and make full use of the various advantages of bipolar devices and unipolar devices. In power integrated circuits (chips), bipolar transistors are widely used because of their rich device types, excellent device parameters, and flexible process flow. [0003] Conventional BiCMOS technology is still based on common lateral PN junction isolation, and many reliability problems will arise in practical applications. like figure 1 As shown, P...

Claims

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Application Information

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IPC IPC(8): H01L21/8249H01L21/762H01L27/06
CPCH01L21/8249H01L21/76224H01L27/0623
Inventor 姚国亮张邵华吴建兴
Owner HANGZHOU SILAN MICROELECTRONICS
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