Preparation method of silicon carbide single crystal with reduced carbon wrapping

Abstract

The invention relates to the technical field of crystal preparation, and discloses a preparation method of a silicon carbide single crystal with reduced carbon wrapping, the method at least comprises the steps of charging and crystal growth, the charging step comprises: adding silicon carbide powder and an oxide into a crystal growth container, the oxide being silicon dioxide and / or cerium dioxide; wherein the silicon carbide powder and the oxide form a wrapped reaction structure, a laminated reaction structure or a composite reaction structure in the crystal growth container; the wrapping reaction structure comprises a silicon dioxide layer and a silicon carbide powder layer wrapping the silicon dioxide layer; the laminated reaction structure comprises a silicon carbide powder layer and a cerium dioxide layer, and an isolator is arranged between the cerium dioxide layer and the silicon carbide powder layer and is not in direct contact with the silicon carbide powder layer; the composite reaction structure comprises a silicon dioxide layer, a silicon carbide powder layer and a cerium dioxide layer, wherein the silicon dioxide layer is wrapped with the silicon carbide powder layer and the cerium dioxide layer, and an isolator is arranged between the cerium dioxide layer and the silicon carbide powder layer without direct contact. The method can effectively reduce the graphitization degree of the silicon carbide crystals.

Description

Technical field [0001] The present invention relates to the field of preparing silicon carbide crystal prepared, and more particularly to a method for reducing the silicon carbide single crystal of carbon wrapping. Background technique [0002] Silicon carbide monocrystals are one of the most important third-generation semiconductor materials, because of its large banned width, high saturation electronic mobility, strong performance, high thermal conductivity, and widely used in power electronics, radio frequency Devices, optoelectronic devices and other fields. At present, the physical gas phase transport (PVT) method is a major growth technique for producing silicon carbide single crystals, that is, at high temperatures, a gas phase source produced by sublimation of silicon carbide raw materials to the seed crystal. [0003] The growth process of the PVT fractal silicon carbide single crystal is carried out in a sealed graphite crucible, and thus the growth environment is in a ...

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Problems solved by technology

[0006] The purpose of the present invention is to overcome the problem that the silicon carbide crystal growth conditions in the prior art are not easy to control, and to provide a method for preparing a silicon carbide single crystal with reduced carbon wrapping, which can effectively reduce the silicon carbide crystal growth rate of the prepared silicon carbide crystal. The degree of graphitization has the advantages of easy control and low operation difficulty

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