Single photon avalanche diode and photodetector array
A technology of single photon avalanche and diode, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of less absorption, limited area of photosensitive area of single photon avalanche diode, low photon detection efficiency of single photon avalanche diode, etc., and achieve avalanche Increased breakdown probability, increased photon detection efficiency, and improved photon detection efficiency
Pending Publication Date: 2022-03-18
JIHUA LAB
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However, in the existing single-photon avalanche diodes, the planar PN junction structure formed by doping limits the area of the photosensitive area of the single-photon avalanche diode and cannot achieve a large increase; at the same time, the planar single-photon avalanche diode based on the planar PN junction structure Photon avalanche diode devices have less absorption of non-vertically incident photons, which also leads to lower photon detection efficiency of single photon avalanche diodes
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[0039] In order to more clearly understand the above objects, features and advantages of the present disclosure, the solutions of the present disclosure will be further described below. It should be noted that, in the case of no conflict, the embodiments of the present disclosure and the features in the embodiments can be combined with each other.
[0040] In the following description, many specific details are set forth in order to fully understand the present disclosure, but the present disclosure can also be implemented in other ways than described here; obviously, the embodiments in the description are only some of the embodiments of the present disclosure, and Not all examples.
[0041] Single photon avalanche diodes in the related art usually adopt a planar PN junction structure, such as figure 1 As shown, its photosensitive area is small, resulting in a small area for the single photon avalanche diode to occur in avalanche breakdown, which affects the photon detection ...
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The invention relates to a single photon avalanche diode and a photodetector array. The single photon avalanche diode comprises a non-planar PN junction; the non-planar PN junction is formed by connecting a first type of epitaxial layer and a second type of doped region; the joint surface of the first type epitaxial layer and the second type doped region is a non-plane; wherein the first type and the second type are respectively one of a P type and an N type. Therefore, by arranging the single-photon avalanche diode comprising the non-planar PN junction structure, the area of the photosensitive region of the single-photon avalanche diode can be increased by using the non-planar PN junction, so that the avalanche breakdown probability of a photoinduced electron hole pair is increased, and the photon detection efficiency is improved; meanwhile, the absorption of incident photons at multiple different angles can be realized by using the non-planar structure, and the photon detection efficiency of the single-photon avalanche diode can also be improved.
Description
technical field [0001] The present disclosure relates to the technical field of photodetection devices, in particular to a single photon avalanche diode and a photodetector array. Background technique [0002] A single photon avalanche diode (Single Photon Avalanche Diode, SPAD) is an avalanche photodiode working in Geiger mode (working voltage greater than breakdown voltage). Because of its advantages of high time resolution, high detection sensitivity and low cost, it is widely used in lidar, medicine, molecular imaging and quantum science and other fields. The working principle of SPAD is: in Geiger mode, when SPAD absorbs photons, electron-hole pairs are generated in the avalanche region, and the avalanche multiplication effect occurs under the action of a strong electric field to form an avalanche current. [0003] Photon Detection Efficiency (PDE) refers to the ratio of the number of detected photons to the number of incident photons, which is used to measure the abil...
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IPC IPC(8): H01L31/107H01L31/0288
CPCH01L31/107H01L31/0288
Inventor 马静兰潇健刘超晖马四光
Owner JIHUA LAB