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Silicon etchant composition, pattern forming method, method for manufacturing array substrate, and array substrate

A technology of composition and etching solution, which is applied in the direction of surface etching composition, chemical instrument and method, semiconductor/solid-state device manufacturing, etc., can solve the problems of undisclosed polysilicon etching speed, inappropriateness, and insufficient etching characteristics, and achieve improvement The effect of etching surface uniformity and high selectivity ratio

Pending Publication Date: 2022-03-25
DONGWOO FINE CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Korean Laid-Open Patent No. 10-2014-0079267 relates to an invention of an etchant composition with an acidic base composition, and discloses a technique for etching a silicon nitride film containing phosphoric acid and a silicon compound, but does not disclose a technique that exhibits an excellent etching rate for polysilicon. The etchant composition, especially the etching properties are practically insufficient in terms of the uniformity of the etched surface
In addition, the acid-based etchant composition is performed by the mechanism of oxidizing silicon to form a silicon oxide film and then removing it with a fluoride such as hydrofluoric acid. Therefore, in a structure using a silicon oxide film as a protective layer is inappropriate

Method used

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  • Silicon etchant composition, pattern forming method, method for manufacturing array substrate, and array substrate
  • Silicon etchant composition, pattern forming method, method for manufacturing array substrate, and array substrate
  • Silicon etchant composition, pattern forming method, method for manufacturing array substrate, and array substrate

Examples

Experimental program
Comparison scheme
Effect test

experiment example

[0106] The performance evaluation was implemented as follows about the etchant composition of the said Example and the comparative example.

[0107] Evaluation 1: Evaluation of Etching Rate for Silicon Film

[0108] will be on a silicon wafer with The wafer on which silicon was vapor-deposited was cut into a size of 1.5×1.5 cm to prepare test pieces. The above-mentioned test piece was immersed for 30 seconds at 80°C and 400 rpm containing the etching solution compositions of the above-mentioned Examples and Comparative Examples. Next, the test piece was taken out, washed with water, dried with air (Air), and the silicon film thickness was measured using an ellipsometer, and the etching rate of the silicon film was calculated from each film thickness change value. At this time, the etching rate was evaluated according to the following criteria, and the results are shown in Table 3 and Table 4 below.

[0109]

[0110] ◎: Etching speed is above

[0111] ○: The etching ...

Embodiment 22

[0143] In addition, in the case of adding a silicon-based compound, it was confirmed that the corrosion resistance of the silicon oxide film was improved and the etching selectivity was also improved. In the case of adding an alkanolamine-based compound, it was confirmed that the surface uniformity was improved. improve. However, in the cases where the above-mentioned additives were added in excess (Examples 13 and 26), the silicon etching rate and etching selectivity decreased.

Embodiment 13 and 26

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Abstract

The invention provides a silicon etching liquid composition, a pattern forming method, a manufacturing method of an array substrate, and the array substrate. The silicon etching liquid composition comprises (A) a basic compound, (B) a metal salt, and (C) water. The silicon etching liquid composition can maintain the etching performance on silicon, induce the anti-corrosion effect of the silicon oxide, ensure high selection ratio, and improve the uniformity of the etching surface.

Description

technical field [0001] The present invention relates to a silicon etchant composition, a method for forming a pattern using the same, a method for manufacturing an array substrate, and an array substrate manufactured based on the same. Background technique [0002] With the development of the information technology (information technology, IT) field, in today's society, the role of semiconductor integrated circuits (IC: integrated circuit), semiconductor elements, semiconductor devices, etc. is becoming more and more important. Electronics in various industrial fields widely used in equipment. In recent years, with the development of miniaturization, thinning, light weight, and high performance of electronic equipment, semiconductor elements used also require excellent storage capacity and high-speed storage operations. With the high integration of such semiconductor elements, fine pattern formation of tens of nanometers (nm) or less is required. [0003] The semiconductor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K13/00C09K13/02H01L27/12C30B29/06C30B33/10
CPCC09K13/02C09K13/00H01L27/1214C30B33/10C30B29/06H01L21/32134H01L21/30604H01L21/31111H01L21/02164
Inventor 鲁珍圭金志原申宇埈
Owner DONGWOO FINE CHEM CO LTD