Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Traveling wave type cross-octave power amplifier for suppressing harmonic waves in working frequency band

A technology of power amplifier and working frequency band, applied in power amplifiers, radio frequency amplifiers, amplifiers with semiconductor devices/discharge tubes, etc. , high inhibition, easy to achieve effect

Pending Publication Date: 2022-03-29
CETC GUOJI SOUTHERN GRP CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But this type of circuit requires 2 n (n∈N * ) with the same power amplifier, power distribution and recombination, the loss is large, the volume is large, and it is difficult to realize the ultra-wideband bridge
2. Reduce the harmonic components in the operating frequency band of the power amplifier by selecting a die process with good linearity, suitable static bias circuit points, and high linearity design. However, there are many restrictions on the design of this method, such as power and efficiency. and other indicators are pinned down, and the harmonics in the working frequency band have little improvement
For power amplifiers such as 6-18GHz, the second harmonic of 6-9GHz cannot be filtered out (otherwise useful signals are filtered out at the same time)
[0005] The application publication number is CN110120789A, the application publication date is August 13, 2019, and the application publication date is April 08, 2015. The application publication number is CN104506143A. The Japanese invention patent "A Higher Harmonic Suppression Circuit of Radio Frequency Power Amplifier" involves a matching circuit for suppressing harmonics of power amplifiers, but they can only suppress harmonics outside the working frequency band. For power such as 6-18GHz Amplifier, the second harmonic of 6-9GHz cannot be filtered out (otherwise useful signals are filtered out at the same time)
[0006] Shortcomings of the prior art closest to the present invention: the harmonics in the operating frequency band of the power amplifier are difficult to suppress; the existing cross-octave power amplifiers that suppress the harmonics in the operating frequency band usually use multi-channel amplifiers after the finished chip is ready. Suppress harmonics through bridge synthesis, or extract harmonic signals for separate processing, large volume and complex structure design is difficult, and the scope of application is relatively limited

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Traveling wave type cross-octave power amplifier for suppressing harmonic waves in working frequency band
  • Traveling wave type cross-octave power amplifier for suppressing harmonic waves in working frequency band
  • Traveling wave type cross-octave power amplifier for suppressing harmonic waves in working frequency band

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] image 3 It is a schematic diagram of Embodiment 1 of the present invention applied in 6-18GHz. The simulation software is ADS, and the dielectric constant, material parameters, and layer thickness are set according to the GaN HEMT process parameters of the 55th Research Institute of China Electronics Technology Group Corporation. The amplifier core 2 and switch adopt the model of the 55th Research Institute of China Electronics Technology Group Corporation. The entire circuit is provided on a GaN substrate. The gate bias circuit 1-2 and the drain bias circuit 3-4 are connected in series with a large inductor and parallel to the ground with a large capacitor to provide -2V gate voltage and 28V drain voltage respectively. The number of amplifier cores 2 is five, the total gate width is gradually increased from 6*80um to 6*100um, and the common source connection is adopted. The gates of the amplifier core 2 are connected to the gate transmission line 1-3 at equal interv...

Embodiment 2

[0034] Embodiment 2 is different from Embodiment 1 in that a two-stage traveling wave amplification structure is used to increase the amplifier gain, such as Figure 6 mentioned. The whole circuit is set on the GaN substrate, and the drain line 3a is not only the drain line of the pre-amplifier, but also the gate line of the post-amplifier. The gate line 1 is provided with a radio frequency input port 1-1, a gate bias circuit 1-2, and a gate transmission line 1-3, and the gate bias circuit 1-2 provides a die gate voltage of -2V. The drain lines 3a-3b are all provided with a drain transmission line load 3-1, an output compensation inductance 3-2, a drain transmission line 3-3, a drain bias circuit 3-4, and a radio frequency output port 3-5 (the drain line 3a default). Drain line 3a supplies +28V and drain line 3b supplies +56V. The number of amplifier cores 2a is five, the common source connection is adopted, the gates are connected to the gate line 1 at equal intervals, and...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a traveling wave type cross-octave power amplifier for suppressing harmonic waves in a working frequency band, a plurality of LC switch resonance structures are connected in parallel on a drain electrode line of the traveling wave type amplifier, when a switch is switched on, the LC switch resonance structures and part of the drain electrode line form a band elimination filter, a low-frequency fundamental wave signal smoothly passes through the band elimination filter, and the harmonic waves of the low-frequency fundamental wave signal are suppressed; when the switch is switched off, the traveling wave amplifier is equivalent to a common traveling wave amplifier. Through the control switch, the function of harmonic suppression in the working frequency band of the cross-frequency-multiplication power amplifier is achieved, and complex segmentation processing on the harmonic in the working frequency band on the system level is avoided. The invention has the advantages of wide frequency band, high harmonic suppression degree in the working frequency band, easiness in implementation and the like, and is worthy of popularization in the industry.

Description

Technical field: [0001] The invention belongs to the technical field of microwave integrated circuits, and relates to a traveling-wave cross-octave power amplifier for suppressing harmonics in a working frequency band. Background technique: [0002] The power amplifier is the core component in microwave communication, electronic detection and other systems. Its main function is to amplify the microwave signal to the required power level. It works in a saturated state and has strong nonlinearity, that is, it is useful in amplification. The signal will generate n harmonics at the same time. Harmonics not only reduce efficiency, but also become interference signals. The nonlinear characteristic is an inherent characteristic of the semiconductor die, which is mainly related to the static operating point, output power, and matching state of the die, and its formation mechanism is complex. We use high-order polynomials to approximate the nonlinear function of the device to descr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03F3/193H03F3/21
CPCH03F3/193H03F3/211H03F2200/451
Inventor 余旭明陶洪琪史雪辉刘伶韩群飞杨常林
Owner CETC GUOJI SOUTHERN GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com