IGBT high-thermal-conductivity packaging structure and preparation method thereof

Abstract

The invention relates to an IGBT high-thermal-conductivity packaging structure and a preparation method thereof. According to the IGBT high-thermal-conductivity packaging structure and the preparation method, the thermal conductivity of an insulating substrate is improved, meanwhile, the advantage of low cost is achieved, and the IGBT high-thermal-conductivity packaging structure can be applied to a high-power IGBT device or a power module. Which comprises a substrate, an insulating substrate and a chip which are sequentially overlapped from bottom to top, and is characterized in that the insulating substrate comprises a lower metal layer, an insulating substrate and an upper metal layer which are sequentially bonded from bottom to top; the insulating substrate comprises a first insulating substrate substrate and a plurality of second insulating substrate substrates; a plurality of circular through holes are formed in the first insulating substrate; and the plurality of second insulating substrates are of circular structures, are matched with the circular through holes and are embedded in the circular through holes. The heat dissipation capability of the insulation substrate can be improved, the advantage of low cost is kept, and the insulation heat dissipation substrate can be applied to a high-power IGBT device or a power module needing a large-size insulation heat dissipation substrate.

Description

Technical field [0001] The present invention relates to the field of power electronics, and more particularly to an IGBT high thermally conductive packaging structure and a method of preparation. Background technique [0002] IGBT (insulated gate bipolar transistors) is applied in a wide range of power converters from hybrid vehicles to the wind turbine of the wind turbine, and has developed as the continuous improved application demand for IGBT power modules or IGBT intelligent power Module. According to different rated power requirements, IGBT devices or power modules use different packaging techniques. The silicon chip and substrate in the IGBT device or power module package structure are electrically isolated between the heat dissipation layers. Generally, direct binding copper (DBC), thick film, and insulating metal substrate (IMS), in which DBC and Thick film techniques are electrically isolated using an insulating substrate. Since the temperature change experienced by the ...

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Problems solved by technology

The thermal expansion coefficient of silicon nitride matches silicon very well and has high thermal conductivity, which is easy to metallize and machine, but the cost is twice as expensive as alumina

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