Method for forming metal nitride thin film

A technology of nitrides and metals, applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the problems of device electrical characteristics degradation, reduction of storage capacity, difficulty in forming, etc., and achieve high thermal stability. Effect

Pending Publication Date: 2022-04-12
EGTM CO LTD
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Problems solved by technology

However, in the chemical vapor deposition method, it is necessary to supply all the substances required to form a thin film into the process chamber at the same time, so it is difficult to form a film with the material properties of the desired composition ratio, and because the process is carried out at a high temperature, it may be damaged. Deteriorating the electrical characteristics of the device or reducing the storage capacity

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  • Method for forming metal nitride thin film
  • Method for forming metal nitride thin film
  • Method for forming metal nitride thin film

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Embodiment Construction

[0036] Below, refer to Figures 1 to 3 Preferred embodiments of the present invention are described in more detail. The embodiments of the present invention can be modified into various forms, and the scope of the present invention should not be construed as being limited to the embodiments described below. The following examples are provided to explain the present invention in more detail to those skilled in the art to which the present invention pertains. Therefore, the shape of each component shown in the drawings may be exaggerated in order to emphasize clearer illustration.

[0037] First of all, the used precursor NbCl5 is a solid, so the pipes in the deposition equipment will be clogged, and it is difficult to transfer a certain amount to the deposition chamber after sublimation into a gas. In addition, other organometallic precursors have a large carbon content, so there is a problem that impurities affect film quality.

[0038] The formation method of the metal (Ⅴ)...

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Abstract

According to one embodiment of the present invention, the method for forming a metal nitride thin film comprises: a deposition step for selectively depositing a metal precursor on the surface of a substrate by supplying the metal precursor to the substrate; a halogenating step of supplying a halogen gas to the substrate to form a metal halogen compound on the surface of the substrate; and a nitriding step in which a nitrogen source is supplied to the substrate and reacts with the metal halogen compound to form a metal nitride.

Description

technical field [0001] The invention relates to a method for forming a metal nitride film, and more specifically relates to a method for forming a metal nitride film using a halogen gas. Background technique [0002] In the past, such as niobium nitride (NbN x , x is about 1) and other metal nitride films are widely used in various technical fields. These nitrides have traditionally been used as hard and decorative coatings, but over the past few decades they have been increasingly used as diffusion barriers and glue layers in microelectronic devices [Applied Surface Science 120 (1997) 199-212]. [0003] For example, NbCl 5 It has been studied as a niobium source in NbN atomic layer epitaxy, however, in this method, Zn is required as a reducing agent [Applied Surface Science 82 / 83 (1994) 468-474]. NbN x Thin films were also deposited by atomic layer deposition using NbCl 5 and NH 3 Deposition was performed [Thin Solid Films 491 (2005) 235-241]. For the film deposited...

Claims

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Application Information

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IPC IPC(8): C23C16/34C23C16/44C23C16/455
CPCC23C16/34C23C16/45553C23C16/02C23C16/45527
Inventor 李根守朴吉在洪钟台辛喆熙
Owner EGTM CO LTD
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