Polyimide glue solution with passivation stability control force and high insulation and thermal conductivity for chip passivation layer and preparation method of polyimide glue solution
A technology of polyimide glue and polyimide glue is applied in the direction of adhesives, semiconductor devices, polymer adhesive additives, etc., which can solve the problem that polyimide coatings cannot have good thermal conductivity and adhesion Performance passivation and stable control force, inability to achieve low hygrothermal cyclic stress, etc., to achieve the effect of realizing hygrothermal cyclic stress, excellent and stable passivation control force, and low hygrothermal cyclic stress
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specific Embodiment approach 1
[0029] Specific embodiment one: the polyimide glue liquid that this embodiment is used for the chip passivation layer has passivation stable control force and high insulation thermal conductivity, and it is made up of 100 parts of polyimide solution, 15 parts by mass parts by mass. Prepared from 1-30 parts of micron boron nitride / nanocellulose composite and 0.1-2 parts of interface coupling agent;
[0030] The structural formula of polyimide in described polyimide solution is:
[0031] The n is 4-20;
[0032] Described Ar is:
[0033] The beneficial effects of this specific embodiment are: this specific embodiment provides a polyimide glue solution for chip passivation layer with stable passivation control force and high insulation and thermal conductivity. The polyimide coating formed by using the glue prepared in this specific embodiment realizes the buffering effect on the damp heat cycle stress through the stable control force, can effectively reduce pinholes or cr...
specific Embodiment approach 2
[0039] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the micron boron nitride / nanocellulose composite is specifically prepared according to the following steps:
[0040] Weigh 10 to 20 parts of micron boron nitride, 5 to 10 parts of nanocellulose, 1 to 3 parts of aluminum isopropoxide and 3 to 10 parts of NaHCO in parts by mass 3 , the weighed nanocellulose is prepared into a nanocellulose dispersion, and then the weighed micron boron nitride and aluminum isopropoxide are sequentially added to the nanocellulose dispersion, under the condition that the stirring speed is 100rpm-300rpm , stirred for 2h to 4h, then added the weighed NaHCO 3 , under the condition that the stirring speed is 100rpm-300rpm, continue stirring for 1h-3h, and finally dry to obtain the micron boron nitride / nanocellulose composite. Others are the same as in the first embodiment.
[0041] In this specific embodiment, micron boron nitride and nanocellulose are modified to fo...
specific Embodiment approach 3
[0043] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that: the micron boron nitride is flake-shaped, with an average particle size of 1 μm to 5 μm; the average diameter of the nanocellulose is 10 nm ~50nm, with an average length of 200nm~300nm. Others are the same as in the first or second embodiment.
[0044] The average diameter of the nanocellulose described in this specific embodiment needs to meet the requirement of dispersion uniformity.
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