Integrated circuit packaging module, preparation method thereof and photoelectric processing module

Abstract

The invention provides a preparation method of an integrated circuit packaging module. The preparation method comprises the following steps: preparing a PIC chip of which a light-induced active surface is coated with a first photoresist layer; cleaning the first photoresist layer, and coating a coating area of the first photoresist layer for multiple times to obtain a second photoresist layer with the thickness being the target thickness; interconnection between the PIC chip and at least one related chip in the multiple related chips and interconnection between the multiple related chips are completed, and a chip module is obtained; performing plastic packaging on the chip module to obtain a first plastic packaging layer, and grinding and thinning the first plastic packaging layer until the second photoresist layer is exposed; and cleaning the second photoresist layer to obtain a preset cavity for laying the optical fiber array waveguide device. The invention also provides an integrated circuit packaging module and a photoelectric processing module. A low-temperature packaging process is adopted, so that adverse effects on circuits such as transistors in the chip are avoided; the preset cavity with relatively high cleanliness can be obtained; and a photoinduced active surface with a complete structure can be obtained.

Description

technical field [0001] The invention relates to the technical field of integrated circuit module packaging, in particular to an integrated circuit packaging module, a preparation method thereof, and a photoelectric processing module. Background technique [0002] As an information carrier, photons have a faster transmission rate than electrons; and there is almost no interference between photons, and photons of different wavelengths, polarizations, and modes can communicate in multiple ways at the same time, so photons have a larger information transmission bandwidth and more High information transmission rate, and not subject to electromagnetic field interference. At present, silicon optoelectronic chips are the information transmission and information processing chip technology with the greatest market development potential. [0003] The microwave light source generated by the laser is coupled to the photonic integrated chip (Photonic Integrated Circuit, PIC) through the ...

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Problems solved by technology

[0004]In the prior art, the high-density heat of the laser is usually used to achieve the melting of a specific area, so as to prepare the required preset cavity, but the high-heat process of the laser It will have adverse effects on the circuits such as transistors in the chip; in addition, the high-density heat of the laser will generate thermal stress in the local area, which will eventually lead to the low cleanliness of the prepared preset cavity, and the structure of the photo-induced active surface will be damaged , which greatly affects the coupling efficiency and quality of the incident light source on the photoactive surface, which in turn affects the transmission efficiency and quality of the photon signal

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