The invention relates to a method for preparing a micro-radio-frequency T-shaped power divider on a metal base, and belongs to the technical field of micro-manufacturing. A gel column used for supporting an inner conductor is manufactured by utilizing SU-8 negative photoresist on a copper base by adopting a UV-LIGA technology, then a graphic glue film is manufactured by utilizing AZ50XT positive photoresist, and structures of a metal frame, the inner conductor, a top cover and the like are obtained through a copper electroforming technology. Finally, the AZ50XT glue film is dissolved by utilizing acetone, and the T-shaped power divider is obtained. According to the method for preparing the micro-radio-frequency T-shaped power divider on the metal base, a traditional silicon base is abandoned and the metal base is used, the problem that the silicon base is prone to being broken into pieces in the manufacturing process is solved, further, a metal conducting layer is not needed to be sputtered on the base, and the process steps are reduced. Meanwhile, when the AZ50XT glue film is removed, heating is not needed, and heat stress cannot be generated inside the structure, so that the probability of failure of manufacturing is reduced.