31results about How to "Peeling can be suppressed" patented technology

A multilayer coating according to the present invention comprises an alumina coating formed, directly or through an intermediate layer, on a hard coating composed of a metallic compound formed on the base material, and the Vickers hardness of the hard coating after alumina coating formation being 22 GPa or more. The multilayer coating is excellent in adhesion between a hard coating and an alumina coating and capable of exhibiting excellent wear resistance and heat resistance over a long period.

The invention relates to a substrate for use in a liquid crystal display of a CF-on-TFT structure in which a color filter is formed on the side of an array substrate in which a switching element is formed, and has an object to provide a substrate for use in a liquid crystal display, which enables simplification of a manufacturing process typified by a photolithography process and has high reliability. The substrate for use in the liquid crystal display is constructed to include external connection terminals which include first terminal electrodes electrically connected to gate bus lines led out from a plurality of pixel regions arranged on a glass substrate in a matrix form, second terminal electrodes formed of forming material of a pixel electrode and directly on the glass substrate, and electrode coupling regions for electrically connecting the first and the second terminal electrodes, and which electrically connect an external circuit and the gate bus lines.

A semiconductor laser includes an active layer formed on a substrate and a pair of cladding layers sandwiching the active layer. On at least one of resonator end faces of the semiconductor laser, a first dielectric film with hydrogen added therein is provided. Between the first dielectric film and the resonator end face, a second dielectric film for suppressing the diffusion of hydrogen is provided. Even when a semiconductor laser with an end face coating film including a hydrogen-added film is exposed to high temperatures, peeling of the end face coating film and deterioration of the end face coating film can be suppressed.

To provide a fine carbon fiber / metal composite material having high mechanical strength, a high thermal conductivity and a low coefficient of thermal expansion and suitable as a substrate for an electronic device.A fine carbon fiber / metal composite material, which is prepared by pressure impregnating a molded product containing fine carbon fibers having a fiber diameter of from 0.5 to 500 nm and a fiber length of at most 1,000 μm, having a multilayer structure wherein cylindrical carbon layers overlap one another, and having a hollow-structured central axis, with aluminum, magnesium, copper or an alloy of such a metal, by molten metal forging.

A first electrode, a first insulating film, a second electrode, a second insulating film, and a pixel electrode are formed on a one surface side of a first substrate of an electro-optical device. The second electrode is electrically connected [to the first electrode] via a first contact hole that penetrates the first insulating film. The second electrode and the second insulating film configure a continuous flat surface, which is the surface on the opposite side to the first substrate, and the pixel electrode is electrically connected to the second electrode. Of the second insulating film, since an inside section positioned inside a concave portion caused by the first contact hole is connected to an outside section provided on the outside of the concave portion, peeling of the inside section is unlikely to occur.

The present invention provides a semiconductor device including an insulating layer, a conductive layer bonded to one main surface of the insulating layer, a semiconductor element arranged such that the upper surface of the semiconductor element faces a direction same as the one main surface of the insulating layer, an upper electrode provided on the upper surface of the semiconductor element, a wiring member that has one end electrically bonded to the upper electrode of the semiconductor element and has another end electrically bonded to the conductive layer, and has a hollow portion, a first sealing material, and a second sealing material, in which the first sealing material seals at least part of the semiconductor element so as to be in contact with the semiconductor element, and the second sealing material seals the wiring member so as to be in contact with the wiring member.

A method for manufacturing a nitride semiconductor light-emitting element comprises: forming a semiconductor laminated structure wherein an n-type nitride semiconductor epitaxial layer, an active layer, and a p-type nitride semiconductor epitaxial layer are laminated on a substrate; forming a p-type electrode having a first electrode layer containing Pd and a second electrode layer containing Ta on the p-type nitride semiconductor epitaxial layer; heat treating at a temperature between 400° C. and 600° C. in ambient containing oxygen after forming the p-type electrode; and forming a pad electrode containing Au on the p-type electrode after the heat treating.

A pixel electrode is formed on a TFT substrate, and a gate insulating film, an inorganic passivation film, a common electrode, and an alignment film are formed in this order thereover. A columnar spacer is formed to the counter substrate and is adapted to define a gap between the TFT substrate and the counter substrate. A through hole is formed in the gate insulating film of the TFT substrate, and the columnar spacer is disposed so as to cover a concave portion formed by the through hole. Since the area of contact between the columnar spacer and the TFT substrate is decreased, it is possible to suppress scraping of the alignment film and thus to prevent occurrence of bright spots.

A MEMS device includes a first substrate in which a first electrode layer, a dielectric layer, and a second electrode layer are stacked on a driving region in this order; and a second substrate which is disposed to face a surface on which the dielectric layer of the first substrate is stacked. The first electrode layer and the dielectric layer extend beyond the second electrode layer toward a non-driving region separated from the driving region, a first resin having elasticity is disposed in a region including an end of the second electrode layer in an extending direction of the dielectric layer, and the first substrate and the second substrate are fixed with an adhesive in a state where the elastically deformed first resin is sandwiched therebetween.

The present invention relates to a transmission belt which is provided with: a rubber layer that is formed from a vulcanized product of a rubber composition which contains a rubber component containing an ethylene-α-olefin elastomer, a filler containing silica, a vulcanizing agent containing a sulfur-based vulcanizing agent, and a curable resin containing an amino resin; and a fiber member that is in contact with the rubber layer.

An object of the invention is to provide a photosensitive laminate in which two or more layers can be collectively patterned, a transfer material, a patterned photosensitive laminate, a method for manufacturing the patterned photosensitive laminate, a touch panel, and an image display device. According to the invention, there are provided a photosensitive laminate in which a first resin layer, an interlayer, and a second resin layer are laminated on a support in this order, at least one of the first resin layer or the second resin layer includes 20 mass % or greater of inorganic particles, and exposure sensitivity of the second resin layer is higher than that of the first resin layer, a transfer material, a patterned photosensitive laminate, a method for manufacturing the patterned photosensitive laminate, a touch panel, and an image display device.

Bearing steel material according to the present invention has: a properly adjusted chemical composition; an average chemical composition of oxide-inclusions which comprises 10 to 45% of CaO, 20 to 45% of Al2O3, 30 to 50% of SiO2, up to 15% (exclusive of 0) of MnO, and 3 to 10% of MgO, with the balance being unavoidable impurities; a maximum major axis diameter of the oxide inclusions in a longitudinal section of the steel material of 20 μm or less; and a spheroidal cementite structure.

An object of the present invention is to obtain a semiconductor device having highly reliable bonding portions. The semiconductor device according to the present invention includes an insulating substrate on which a conductive pattern is formed, and an electrode terminal and a semiconductor element which are bonded to the conductive pattern, the electrode terminal and the conductive pattern are bonded by ultrasonic bonding on a bonding face, and the ultrasonic bonding is performed at a plurality of positions.