56results about How to "Difference in level" patented technology

In a processing method of a stacked-layer film in which a metal film is provided on an oxide insulating film, plasma containing an oxygen ion is generated by applying high-frequency power with power density greater than or equal to 0.59 W/cm² and less than or equal to 1.18 W/cm² to the stacked-layer film side under an atmosphere containing oxygen in which pressure is greater than or equal to 5 Pa and less than or equal to 15 Pa, the metal film is oxidized by the oxygen ion, and an oxide insulating film containing excess oxygen is formed by supplying oxygen to the oxide insulating film.

Disclosed is a device and method for generating X-rays having different energy levels as well as a material discrimination system thereof. The method comprises the steps of: generating a first pulse voltage, a second pulse voltage, a third pulse voltage and a fourth pulse voltage, generating a first electron beam having a first beam load and a second electron beam having a second beam load, respectively, based on the first pulse voltage and second pulse voltage, generating a first microwave having a first power and a second microwave having a second power, respectively, based on the third pulse voltage and the fourth pulse voltage, accelerating the first and second electron beams respectively using the first and second microwave to obtain the accelerated first electron beam and the second electron beam, hitting a target with the accelerated first electron beam and the second electron beam to generate a first X-ray and a second X-ray having different energy levels. The X-rays having different energy levels generated by the present invention can be used in the non-destructive inspection for large-sized container cargo at places such as Customs, ports and airports, and in realizing the material discrimination for the inspected object.

The present invention relates to an organic semiconductor thin film suitably employed in electronics, photonics, bioelectronics, or the like, and a method for forming the same. The present invention further relates to a solution for an organic semiconductor used to form the organic semiconductor thin film and an organic semiconductor device using the organic semiconductor thin film.

The transistor of the present invention is manufactured by forming sequentially a gate electrode (2), an insulator layer (3), a source electrode and drain electrode (4, 4) on a glass substrate (5), applying thereto a 0.05% (by mass) solution of pentacene in o-dichlorobenzene and drying the solution to form an organic semiconductor thin film (1).

The present invention provides a transistor with superior electronic characteristics because the organic semiconductor thin film (1), which can be formed easily at low cost, is almost free of defects.

The invention relates to a substrate for use in a liquid crystal display of a CF-on-TFT structure in which a color filter is formed on the side of an array substrate in which a switching element is formed, and has an object to provide a substrate for use in a liquid crystal display, which enables simplification of a manufacturing process typified by a photolithography process and has high reliability. The substrate for use in the liquid crystal display is constructed to include external connection terminals which include first terminal electrodes electrically connected to gate bus lines led out from a plurality of pixel regions arranged on a glass substrate in a matrix form, second terminal electrodes formed of forming material of a pixel electrode and directly on the glass substrate, and electrode coupling regions for electrically connecting the first and the second terminal electrodes, and which electrically connect an external circuit and the gate bus lines.

A method of producing ceramic laminates includes forming a ceramic green sheet by applying a ceramic slurry on a carrier film; forming, maintaining a predetermined gap, a plurality of electrically conducting patterns having inclined surfaces at the ends by printing an electrically conducting paste on the main surface of the ceramic green sheet; forming ceramic patterns having inclined surfaces at the ends among the electrically conducting patterns by printing a ceramic paste with a distance of not smaller than 10μm from the electrically conducting patterns; and laminating ceramic green sheets on which are formed the electrically conducting and ceramic patterns.

A multilayer ceramic electronic component that is small, that has high electrical strength, and that is resistant to separation between ceramic layers includes a ceramic sintered body having a substantially rectangular parallelepiped shape and a plurality of first and second internal electrodes. The plurality of first and second internal electrodes are alternately arranged so as to face each other. The first and second internal electrodes are parallel or substantially parallel to first and second major surfaces. The first and second internal electrodes are exposed to at least one of the fifth and sixth surfaces and are not exposed to the third or fourth surface. No bends exist in any of the ends of each of the first and second internal electrodes adjacent to the third and fourth surfaces.

A thin keyboard having multiple keys is disclosed. At least one of the keys includes a key magnet, and a holding magnet is mounted on a transverse slider. The key is located in a ready position by a magnetic attraction of the holding magnet to the key magnet. When the transverse slider is slid, a separating protrusion pushes a chamfer to widen the distance between the holding magnet and the key magnet. The distance between both magnets is also widened in a right and left direction, and when the magnetic attraction drops, the key is located by gravity in a release position.

Provided is a method of manufacturing a semiconductor device capable of adhering semiconductor elements and a support member for mounting semiconductor elements, such as lead frames, organic substrates or the like, even in a relatively low temperature range without damaging adhesion property and workability and of suppressing the occurrence of voids. The method of manufacturing a semiconductor device according to the invention is a method of manufacturing a semiconductor device comprising a semiconductor element and a support member adhered to the semiconductor element through a cured material of an adhesive film, wherein the method comprises the steps (a) to (d) in this order;

• • (a) preparing adhesive film-attached semiconductor elements;
  • (b) thermocompression-bonding said adhesive film-attached semiconductor elements to said support member so as to obtain a semiconductor part made of said adhesive film-attached semiconductor elements and said support member;
  • (c) heating and pressurizing said semiconductor part made of said adhesive film-attached semiconductor elements and said support member using a pressurized fluid so as to proceed with curing of adhesive film; and
  • (d) electrically connecting said adhesive film-attached semiconductor elements and said support member.

A first conductive layer in which a first electrode film is formed, a first protective layer on the first conductive layer, a first hole penetrating through the first protective layer to reach the first electrode film, a second conductive layer including a second electrode film which is disposed on the first protective layer and in contact with a portion of the first electrode film at the bottom of the first hole and the lower electrode, a second protective layer disposed on the second conductive layer and including the insulating film, a second hole disposed on the second protective layer and penetrating through the second protective layer to reach the second electrode film, and a third conductive layer including a third electrode film which is in contact with a portion of the second electrode film at the bottom of the second hole and the upper electrode.

A semiconductor device includes an element isolation insulating film, memory cell transistors formed in an element isolation region and having respective gate electrodes, and a stopper film for forming a contact, formed both on a sidewall of the gate electrode of each transistor and on the element isolation insulating film between the gate electrodes. A level difference is set between the upper surface of the element isolation insulating film and the upper surface of the semiconductor substrate in the element isolation region. The level difference is set so that a level difference between the gate electrodes is smaller than a level difference in the gate electrode. Furthermore, the surface of the semiconductor substrate in the drain contact formation region is located lower than the surface of the semiconductor substrate corresponding to the gate electrode.

To provide a polishing compound which can satisfy both high removal rate of an object to be polished and excellent property to eliminate the difference in level, and to provide a polishing method which can polish a wiring metal fast while suppressing increase of a wiring metal resistance and is excellent in the property to eliminate the difference in level.

A polishing compound which comprises abrasive particles, an oxidizing agent, ammonium ions, polyvalent carboxylate ions, at least one chelating agent selected from the group consisting of pentaethylenehexamine, triethylenetetramine and tetraethylenepentamine, and an aqueous medium. Further, a polishing method of polishing a wiring metal 3 by using the polishing compound, after providing a wiring trench 2 on a resin substrate 1 and embedding the wiring metal 3 in the wiring trench 2.

A method for transferring objects onto a substrate, or running substrate, the objects to be transferred being placed in a transfer area containing a carrier liquid forming a conveyor, the objects being held by a compact film of particles floating on the carrier liquid of the transfer area, within which the objects are displaced with the film of particles to be transferred onto the substrate, making at least one connector on at least one of the objects, the connector being made by a substance comprising a polymerizable compound, put in contact with the object arranged within the transfer area, and then by polymerization of the substance.

The present invention provides a new method for manufacturing an electronic part, which is capable of reducing the number of steps of superpose-printing, achieving positional accuracy (alignment accuracy) of precise superposed patterns, and layering with substantially no difference in level, thereby improving productivity and dimensional accuracy and eliminating defects. The method for manufacturing an electronic part includes the steps of forming a composite ink pattern layer on a releasing surface of a transfer plate using a relief offset method, and then simultaneously reversely transferring the composite ink pattern layer to a printing object. Various organic transistor elements are formed by combining a conductive ink, an insulating ink, and an ink containing a semiconductor.

Only individual piece-like flexible wiring boards produced separately and judged to be non-defective products in an inspection step in advance are mounted at regular intervals on a carrying support film to thereby obtain a TAB tape carrier. According to this method, the yield on continuous production can be improved while the step of replacing defective flexible wiring boards found by inspection with non-defective flexible wiring boards can be omitted after mounting of the flexible wiring boards. A difference in level between the respective flexible wiring boards can be prevented from being caused by the replacement, so that high connection reliability can be ensured.

A thin film semiconductor device formed as integrated circuits on an insulating substrate with bottom gate type thin film transistors stacked with gate electrodes, a gate insulating film and a semiconductor thin film in the order from below upward. The gate electrodes comprise metallic materials with thickness less than 100 nm. The gate insulating film has a thickness thicker than the gate electrodes. The semiconductor thin film comprises polycrystalline silicon crystallized by a laser beam. By reducing thickness of metallic gate electrodes, thermal capacity becomes small and difference in thermal condition on the metallic gate electrodes and on the insulating substrate made of glass or the like becomes small. This invention relates to the task of uniforming and optimizing recrystallization by a laser anneal treatment provided for the semiconductor thin film which works as an active layer of the bottom gate type thin film transistors.