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Glass powder suitable for crystalline silicon p + layer contact and used for thick film silver paste and preparation method of glass powder

A glass powder and crystalline silicon technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of high glass softening temperature, inability to meet high square resistance, low square resistance, etc., to optimize contact performance, reduce contact resistance and Metal-induced recombination rate, the effect of promoting rapid formation

Pending Publication Date: 2022-04-22
GUANGDONG NANHAI ETETB TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The glass softening temperature of the invention is relatively high, suitable for sheet sources with high p+ layer concentration and low square resistance, which cannot satisfy the current high square resistance system

Method used

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  • Glass powder suitable for crystalline silicon p + layer contact and used for thick film silver paste and preparation method of glass powder
  • Glass powder suitable for crystalline silicon p + layer contact and used for thick film silver paste and preparation method of glass powder
  • Glass powder suitable for crystalline silicon p + layer contact and used for thick film silver paste and preparation method of glass powder

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0028] Reference example 1-2 and embodiment 1-18 provide a kind of glass powder, the preparation raw material of described glass powder is by weight percentage, as shown in table 1:

[0029] Table 1

[0030]

[0031]

[0032] performance evaluation

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Abstract

The invention relates to C03C, in particular to glass powder suitable for crystalline silicon p + layer contact and used for thick film silver paste and a preparation method of the glass powder. The preparation raw materials of the glass powder comprise a metal oxide and a non-metal oxide. According to the glass powder for the thick film silver paste suitable for crystalline silicon p + layer contact, the glass powder is introduced into the thick film silver paste, so that the metal-semiconductor contact resistance and the metal induced recombination speed can be reduced. By controlling the particle size and the use amount of the glass powder, rapid formation of silver microcrystals in silver paste sintering can be promoted, corrosion to a doping layer and formation of aluminum pinning are reduced, and the open-circuit voltage and the filling factor of the cell are improved. The glass powder provided by the invention can be used in TOPCon cell silver-aluminum paste, optimizes the metal-semiconductor contact performance of the silver-aluminum paste and a p + layer of a crystalline silicon solar cell, reduces metal induced recombination, improves the open-circuit voltage of the solar cell, and improves the photoelectric conversion efficiency of an N-type or P-type TOPCon crystalline silicon solar cell.

Description

technical field [0001] The present invention relates to C03C, and more specifically, the present invention relates to the field of functional glass frit materials, which can be used as raw materials for preparing thick-film silver pastes, and related thick-film silver pastes can be applied to the p+ layer surface of N-type crystalline silicon solar cells to realize electrode and Ohmic contact of the p+ layer. Background technique [0002] Solar cell power generation technology, as a new power generation technology that is clean, environmentally friendly, safe and reliable, rich in resources, and wide in application fields, is one of the most promising energy utilization technologies in the future world. At present, the mainstream photovoltaic technology is mainly P-type rear passivated local contact cell (PERC cell), the industrialization efficiency is 22.5-23.3%, but limited by the industrialization of PERC cell technology, the highest conversion efficiency is about 24.5%. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C12/00C03C8/24H01L31/0224
CPCC03C12/00C03C8/24H01L31/022425
Inventor 刘家敬李宇杨至灏黄良辉
Owner GUANGDONG NANHAI ETETB TECH CO LTD
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