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MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device integrating junction barrier Schottky

A junction barrier Schottky and device technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low design flexibility and inability to flexibly control the proportion of Schottky in MOSFET devices, and achieve high total area , good design flexibility, and the effect of low specific on-resistance

Pending Publication Date: 2022-04-26
海科(嘉兴)电力科技有限公司
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Problems solved by technology

[0004] The embodiment of the present application provides a MOSFET device with integrated junction barrier Schottky, which is used to solve the following technical problem: the embedded integrated junction barrier Schottky MOSFET cell cannot flexibly control the Schottky in the MOSFET device. proportion, low design flexibility

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  • MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device integrating junction barrier Schottky
  • MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device integrating junction barrier Schottky
  • MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device integrating junction barrier Schottky

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Embodiment Construction

[0028] In order to enable those skilled in the art to better understand the technical solutions in the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described The embodiments are only some of the embodiments of the present application, but not all of them. Based on the embodiments of this specification, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the scope of protection of this application.

[0029] The embodiment of the present application provides a MOSFET device with integrated junction barrier Schottky, which adopts a composite structure in which junction barrier Schottky cells and MOSFET cells are arranged alternately in cell design, and is integrated in a MOSFET device. Therefore, there is no need to connect a Schottky...

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Abstract

The invention discloses an MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device integrated with a junction barrier Schottky, which belongs to the field of semiconductor manufacturing and is used for solving the technical problem that an embedded MOSFET cell integrated with the junction barrier Schottky cannot flexibly control the proportion of the Schottky in the MOSFET device. The MOSFET device comprises an epitaxial layer, and a plurality of MOSFET cells and junction barrier Schottky JBS cells which are arranged on the surface of the epitaxial layer. The MOSFET cells and the JBS cells are arranged according to a preset proportion; each MOSFET cell at least comprises a well region, a source region and a highly doped P-type region; each JBS cell comprises a plurality of layers of annular highly-doped P-type regions and Schottky regions formed between the layers of annular highly-doped P-type regions; the ion doping concentration of the JFET region is greater than or equal to the ion doping concentration of the epitaxial layer, and the width of the JFET region and the spacing of each layer of annular highly-doped P-type region are both valued in a preset interval, so that the MOSFET device has relatively small conduction voltage drop and relatively strong electric field shielding capability.

Description

technical field [0001] The application relates to the field of power diodes, in particular to a MOSFET device integrating junction barrier Schottky. Background technique [0002] There are base crystal plane dislocations in silicon carbide crystals, and under certain conditions, base crystal plane dislocations can be transformed into stacking faults. When the body diode in the silicon carbide power MOSFET device is turned on, under bipolar operation, the recombination of electrons and holes will make the stacking fault continue to expand, and bipolar degradation occurs. This phenomenon increases the on-voltage resistance of silicon carbide power MOSFET devices, increases the leakage current in blocking mode, and increases the conduction voltage drop of the body diode in silicon carbide power MOSFET devices, thereby reducing the silicon carbide power MOSFET. device reliability. [0003] In practical circuit applications, in order to avoid bipolar degradation, external anti-...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/06
CPCH01L29/7804H01L29/0615
Inventor 于霄恬
Owner 海科(嘉兴)电力科技有限公司
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