Junction barrier schottky diode

Abstract

The junction barrier Schottky diode comprises a substrate layer and a heterojunction structure layer which is arranged on the substrate layer and comprises one or more two-dimensional electron gas channels from bottom to top in sequence, and a Schottky contact layer and a first ohmic contact layer which are separated from each other are arranged on the heterojunction structure layer; a cathode is prepared on the first ohmic contact layer, a plurality of P-type semiconductor layers are arranged between the Schottky contact layer and the heterojunction structure layer, and Schottky contact is formed between the Schottky contact layer and the heterojunction structure layer surrounding the P-type semiconductor layers. And preparing an anode on the contact surface of the P-type semiconductor layer and the Schottky contact layer. The patterned P-GaN region is used for forming a junction barrier so as to distribute an electric field with high blocking voltage and low leakage current, high switching speed, low dynamic loss, low conduction loss and high output power density are kept, meanwhile, high blocking voltage and low leakage current are achieved, the structure is simple, and implementation is easy.

Description

technical field [0001] The invention relates to the technical field of semiconductor power devices, in particular to a junction barrier Schottky diode. Background technique [0002] Power Electronic Devices, also known as power semiconductor devices, refer to high-power electronic devices used in power conversion and power control circuits. It can be divided into half-controlled devices, fully-controlled devices and uncontrolled devices, among which the thyristor is a half-controlled device with the highest withstand voltage and current capacity among all devices; the diode is an uncontrolled device with simple structure and principle and reliable operation ; It can also be divided into voltage-driven devices and current-driven devices, among which GTO and GTR are current-driven devices, and IGBT and power MOSFET are voltage-driven devices. [0003] By improving, innovating, and optimizing the materials, structures, and manufacturing processes of power semiconductor devices...

AI Technical Summary

Problems solved by technology

[0005] However, the Schottky barrier is lowered and thinned under reverse bias due to the image force at the metal-semiconductor (MS) contact interface: the higher the reverse bias, the higher the Schottky barrier height The more it drops, the thinner the barrier width becomes, which in turn leads to an increase in thermionic emission current and tunneling current

Macroscopically, this effect will show that the reverse leakage increases significantly with the increase of the reverse bias voltage, which not only reduces the reverse withstand voltage of the device, but also increases the off-state power consumption of the device, so that the application of Schottky diodes range is severely limited

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