Preparation method of high-quality metal nanodot array

A metal nano-dot array technology, which is applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the problem that PS residues are difficult to wash off, the surface of nano-dots is sunken, and it is difficult to obtain ideal and high-quality nano-dots. point array etc.

Pending Publication Date: 2022-04-29
SOUTH CHINA NORMAL UNIVERSITY
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Problems solved by technology

[0003] However, for metal materials, the polystyrene bead-assisted ion etching method will cause PS residues that are difficult to wash off due to some reactions at the interface between the metal and the PS bead and the damage to the film by physical etching. The surface creates depressions, making it difficult to obtain ideal, high-quality nanodot arrays

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  • Preparation method of high-quality metal nanodot array
  • Preparation method of high-quality metal nanodot array
  • Preparation method of high-quality metal nanodot array

Examples

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Embodiment 1

[0032] A method for preparing a high-quality metal nano-dot array of this embodiment comprises the following steps:

[0033] S1: Preparation of metal cobalt thin film on the substrate by magnetron sputtering process: select Si single crystal substrate in (001) direction, prepare Co thin film on the substrate by magnetron sputtering method, the thickness of the film is 60nm, and then obtain The samples were ultrasonically cleaned with alcohol for 3 min and dried with nitrogen gas. The metal thin film is prepared by magnetron sputtering, which can improve the bonding force between the metal thin film and the substrate, and avoid damage to the nano-dot structure during the ultrasonic cleaning process. The preparation parameters of magnetron sputtering are as follows:

[0034] DC current (mA) temperature(℃) Argon pressure (mTorr) 50 30 4

[0035] S2: Prepare an anti-etching protective layer by thermal evaporation on the surface of the Co film prepared in ...

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Abstract

The invention relates to a preparation method of a high-quality metal nanodot array. The preparation method comprises the following steps: S1, preparing a metal film on a substrate by adopting a magnetron sputtering process; s2, an anti-etching protection layer is prepared on the surface of the metal film prepared in the step S1 through thermal evaporation; and S3, preparing the high-quality metal nanodot array by adopting a polystyrene bead auxiliary ion etching method. Compared with the prior art, the preparation method has the advantages that the metal film is effectively protected by preparing the anti-etching protection layer, direct contact between the metal film and the PS beads is avoided, interface reaction is avoided, damage to the surface of the metal film caused by physical etching is avoided, and the high-quality and high-density ordered nano-dot array structure is prepared; the surface of the nanodot is smooth and clean, impurity residues are avoided, and the center is not sunken.

Description

technical field [0001] The invention relates to the technical field of nano-etching, in particular to a method for preparing a high-quality metal nano-dot array. Background technique [0002] At present, there are several ways to obtain ordered metal nanodot arrays: photolithography, focused ion beam, electron beam exposure, polystyrene bead template method, etc. Because most of the nano-preparation processes are expensive and complicated, they are not suitable for scientific research experiments to prepare nano-dot arrays, so the cheap and simple polystyrene ball template method is favored by the scientific research community. The polystyrene bead template method is to form a template by monodisperse arrangement of uniform polystyrene bead. By controlling the parameters, a nano-dot array with any diameter of 100nm-10um can be obtained. [0003] However, for metal materials, the polystyrene bead-assisted ion etching method will cause PS residues that are difficult to wash o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/20C23C14/24
CPCC23C14/35C23C14/205C23C14/20C23C14/24
Inventor 侯志鹏王亚栋徐娇卫智健徐联星
Owner SOUTH CHINA NORMAL UNIVERSITY
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