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Simulation system and method of transient thermal resistance

A transient thermal resistance and simulation system technology, which is applied in the direction of instruments, measuring devices, measuring electricity, etc., can solve the problems of high cost and long time consumption

Active Publication Date: 2022-06-28
BEIJING SMARTCHIP MICROELECTRONICS TECH COMPANY +3
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the thermal resistance of an IGBT device is not a fixed value. The current transient thermal resistance change curve of an IGBT device over frequency needs to be measured experimentally, but this method is time-consuming and expensive.

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  • Simulation system and method of transient thermal resistance
  • Simulation system and method of transient thermal resistance
  • Simulation system and method of transient thermal resistance

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Embodiment Construction

[0024] The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only used to illustrate and explain the present invention, but not to limit the present invention.

[0025] figure 1 It is a structural diagram of a simulation system for transient thermal resistance provided by an embodiment of the present invention. like figure 1 As shown, the shown analog system may include: a signal generating device 10 for generating a set of excitation signals, wherein different excitation signals in the set of excitation signals have the same duty cycle and different periods; a measurement circuit 20, which uses respectively applying the different excitation signals to both ends of the equivalent thermal resistance model of the IGBT module to measure the maximum transient thermal resistance of the equivalent thermal resistance model under the d...

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Abstract

The invention relates to the technical field of semiconductors, and discloses a transient thermal resistance simulation system and method. The analog system includes: a signal generating device, used to generate a group of excitation signals, wherein different excitation signals in the group of excitation signals have the same duty cycle and different periods; a measurement circuit, used to convert the different excitation signals respectively applied to both ends of the equivalent thermal resistance model of the IGBT module to measure the maximum transient thermal resistance of the equivalent thermal resistance model under the different excitation signals; and a conversion device for converting the different excitation signals to The maximum transient thermal resistance under the equivalent thermal resistance model is converted into the transient thermal resistance curve of the IGBT module under the duty cycle. Therefore, the present invention can build a set of equivalent thermal resistance simulation circuit for the IGBT module, and quickly obtain the transient thermal resistance curve of the IGBT module by changing the pulse square wave excitation signal in the simulation circuit.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a system and method for simulating transient thermal resistance. Background technique [0002] The IGBT, the heart of power electronic equipment, often works in an environment of high voltage and high current. In recent years, with the development of semiconductor technology, the operating frequency of power electronic equipment has become higher and higher, which further aggravates the heat generation of IGBT devices. A large amount of heat generation will not only affect the normal operation of the IGBT device, but also cause thermal damage to the circuit around the device, thereby reducing the overall reliability of the system equipment, and even leading to equipment failure. Thermal resistance is an important physical parameter that reflects the quality of device heat dissipation, and it is defined as the device junction temperature rise caused by unit power. ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
CPCG01R31/2619
Inventor 赵东艳王于波梁英宗陈燕宁肖超张泉付振刘芳林国栋
Owner BEIJING SMARTCHIP MICROELECTRONICS TECH COMPANY