Growth method and device for increasing tellurium zinc cadmium single crystal rate
A technology of a growth device and a growth method is applied in the field of photoelectric material preparation to achieve the effects of improving the probability of large single crystals, improving the difference of inconsistent thermal conductivity, and improving the shape of the solid-liquid interface
Pending Publication Date: 2022-05-13
KUNMING INST OF PHYSICS
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Problems solved by technology
[0006] At present, there is no specific method for designing a CdZnTe crystal growth device, improving the thermal conductivity of the PBN crucible to solve the shape of the solid-liquid interface during the growth process, so as to grow a large-volume single crystal
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[0022] The present invention is a growth method for increasing the cadmium zinc telluride single crystal rate, which is used for the cadmium zinc telluride crystal growth process, comprising the following steps:
[0023] (1) Cut the synthesized CdZnTe polycrystal into small pieces and put them into a PBN crucible. The thickness of the PBN crucible in the seed cavity and the shoulder part is the same, about 2mm to 3mm; the thickness of the crucible in the equal diameter part is gradually reduced, and the ratio of the wall thickness of the front end of the crucible to the wall thickness of the crucible end is greater than 2:1;
[0024] (2) Put the PBN loaded with polycrystalline material into the quartz tube crucible, and vacuumize the inside of the quartz tube crucible. The vacuum should be better than 10-6mbar;
[0025] (3) Place the quartz crucible in the crystal growth furnace. Crystal growth was performed by vertical gradient solidification (VGF) or moving heater method (...
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Abstract
The invention discloses a growth method and device for increasing the tellurium-zinc-cadmium single crystal rate. The device comprises a PBN crucible, a supporting device, a tellurium-zinc-cadmium material, a quartz crucible container and a heating unit. Filling the tellurium-zinc-cadmium material into a PBN crucible and sealing the PBN crucible in a quartz crucible container; the quartz crucible container is arranged on the supporting device; the PBN crucible comprises a seed crystal seeding part, a growth shouldering part and an equal-diameter section growth part; the crucible thickness of the seed crystal seeding part is consistent with that of the growth shouldering part; the wall thickness of the equal-diameter section of the PBN crucible is gradually reduced according to a linear proportion; and the heating unit is positioned on the outer side of the PBN crucible. The method comprises the following steps: putting a polycrystal tellurium-zinc-cadmium material into a PBN crucible, putting the polycrystal tellurium-zinc-cadmium material into a quartz tube crucible, vacuumizing the interior of the quartz tube crucible, putting the quartz crucible into a crystal growth furnace, carrying out crystal growth by adopting a VGF (Vertical Growth Factor) method or a THM (Total Hormone Molding) method or a Burgi Chimann method, slowly cooling after the growth is completed, taking out the crystal, and the like. The shape of a solid-liquid interface can be improved, and the probability of obtaining large single crystals is increased.
Description
technical field [0001] The invention belongs to the technical field of photoelectric material preparation, and in particular relates to a growth method and device for increasing the single crystal rate of CdZnTe. Background technique [0002] At present, infrared focal plane detectors have been widely used in military, industrial, environmental and medical fields. The infrared mercury cadmium telluride infrared detector chip uses cadmium zinc telluride material as the substrate material. To prepare qualified CdZnTe substrates, it is necessary to grow high-quality CdZnTe crystal materials. The preparation of cadmium zinc telluride crystal material mainly includes ingredients, synthesis, firing, growth, cutting and other aspects. [0003] CdZnTe crystal growth is difficult due to the physical and chemical properties of its own materials, and it is difficult to obtain high-quality large-volume single crystals, so it is impossible to provide high-quality CdZnTe substrate mater...
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IPC IPC(8): C30B11/00C30B29/46
CPCC30B29/46C30B11/00C30B11/002C30B11/003C30B11/006C30B11/007
Inventor 孔金丞姬荣斌姜军赵鹏赵增林陈少璠赵文庹梦寒贺政蔡春江李向堃
Owner KUNMING INST OF PHYSICS