Silicon-based Schottky photoelectric detector and preparation method and application thereof

A technology of photodetector and Schottky contact, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of sharp drop in responsivity, unobvious dark current suppression, poor conductivity, etc., achieve large responsivity, increase electrode Light transmission performance, dark current suppression effect

Pending Publication Date: 2022-05-13
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In order to increase the barrier height formed by ITO / semiconductor materials, it has become a common practice to insert other materials including insulators and metals between ITO type and semiconductor materials, but still face poor conductivity, sharp drop in responsivity and dark current. At present, these structures have not yet achieved silicon-based near-infrared detection with sufficient performance.

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  • Silicon-based Schottky photoelectric detector and preparation method and application thereof
  • Silicon-based Schottky photoelectric detector and preparation method and application thereof
  • Silicon-based Schottky photoelectric detector and preparation method and application thereof

Examples

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Embodiment 1

[0083] This embodiment is used to illustrate the structure and preparation method of the silicon-based Schottky photodetector (ITO / 6nmAu / Si / Al) with an Au insertion layer of the present invention.

[0084] Specifically, in this scheme, the device structure is selected as the attached figure 1 Structure in 1. The substrate is a commercial epi-readyn type silicon substrate (0.1~1Ω-cm, thickness 400±10μm); the photosensitive element is defined by ultraviolet lithography, and the area is selected as 0.02cm 2 ; The light-transmitting layer used to improve the Schottky barrier is selected as a 6nm Au film grown by electron beam evaporation; the conductive electrode is selected as a 100nm ITO film material grown by magnetron sputtering; the back ohmic contact electrode is selected as a 300nm Al film grown by electron beam evaporation .

[0085] In this embodiment, the Schottky semiconductor material layer is directly selected as the n-type silicon substrate material, and no new Sch...

Embodiment 2

[0089] This embodiment is used to illustrate the structure and preparation method of the silicon-based Schottky photodetector (ITO / 6nmAu / Si / Al) with an Au insertion layer of the present invention.

[0090] Specifically, in this scheme, the device structure is selected as the attached figure 1 Structure in 1. The substrate is a commercial epi-readyn type silicon substrate (0.1~1Ω-cm, thickness 400±10μm); the photosensitive element is defined by ultraviolet lithography, and the area is selected as 0.0007cm 2 ; The light-transmitting layer used to improve the Schottky barrier is selected as a 6nm Au film grown by electron beam evaporation; the conductive electrode is selected as a 100nm ITO film material grown by magnetron sputtering; the back ohmic contact electrode is selected as a 300nm Al film grown by electron beam evaporation .

[0091] In this embodiment, the Schottky semiconductor material layer is directly selected as the n-type silicon substrate material, and no new S...

Embodiment 3

[0095] This example is used to illustrate the structure and preparation method of the silicon-based Schottky photodetector (ITO / 2nmAu / Si / Al) with an Au insertion layer of the present invention.

[0096] Specifically, in this scheme, the device structure is selected as the attached figure 1 Structure in 1. The substrate is a commercial epi-readyn type silicon substrate (0.1~1Ω-cm, thickness 400±10μm); the photosensitive element is defined by ultraviolet lithography, and the area is selected as 0.0007cm 2 ; The light-transmitting layer used to improve the Schottky barrier is selected as a 2nm Au film grown by electron beam evaporation; the conductive electrode is selected as a 100nm ITO film material grown by magnetron sputtering; the back ohmic contact electrode is selected as a 300nm Al film grown by electron beam evaporation .

[0097] In this embodiment, the Schottky semiconductor material layer is directly selected as the n-type silicon substrate material, and no new Scho...

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Abstract

The invention provides a silicon-based Schottky photoelectric detector and a preparation method and application thereof. According to the photoelectric detector, the influence on light absorption can be reduced as much as possible while the Schottky barrier is increased to suppress dark current, the large responsivity of the device is guaranteed while the dark current is greatly suppressed, the light transmission performance of the electrode is effectively improved, and therefore the ultra-low dark current high responsivity silicon-based near infrared detector compatible with the CMOS technology is obtained.

Description

technical field [0001] The invention belongs to the field of semiconductor devices, and relates to a silicon-based Schottky photodetector and a preparation method and application thereof. Background technique [0002] Optical communication technology, which uses light as the information carrier to realize communication, has become one of the most important technologies in modern society by virtue of its excellent speed transmission performance and powerful information capacity. Among them, photodetectors that perform photoelectric signal conversion have also become a research hotspot. The existing mature complementary metal-oxide-semiconductor (CMOS) processes are all based on silicon materials. However, bulk silicon materials have little absorption of light with wavelengths exceeding 1100nm. Therefore, photodetectors with excellent performance in the optical communication band 1310nm and 1550nm are mainly are based on compound semiconductors (III-V) and Ge-Si materials. I...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/108H01L31/0224H01L31/18
CPCH01L31/108H01L31/022475H01L31/1804H01L31/1884
Inventor 陈弘李欣欣邓震贾海强王文新
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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