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SiC MOSFET driving control circuit with adjustable driving voltage and resistance

A technology for driving control circuits and driving voltages, which is used in high-efficiency power electronic conversion, electrical components, climate sustainability, etc., and can solve problems such as difficulty in ensuring high gain and high stability at the same time.

Pending Publication Date: 2022-05-13
BEIJING MECHANICAL EQUIP INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above analysis, the embodiment of the present invention aims to provide a SiC MOSFET drive control circuit with adjustable drive voltage and resistance, so as to solve the problem that it is difficult to simultaneously ensure high gain, simple structure, high stability, and high efficiency in the prior art

Method used

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  • SiC MOSFET driving control circuit with adjustable driving voltage and resistance
  • SiC MOSFET driving control circuit with adjustable driving voltage and resistance
  • SiC MOSFET driving control circuit with adjustable driving voltage and resistance

Examples

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Embodiment 1

[0069] A specific embodiment of the present invention discloses a SiC MOSFET drive control circuit with adjustable drive voltage and resistance, such as figure 1 As shown, including control chip, SiC MOSFET device, power supply V G1 ~V G2 , switch tube S 1 ~S 6 , resistor R G1 ~R G2 . Resistance R G1 G2 , supply voltage V G1 >V G2 .

[0070] Among them, the control chip is used to output the switching tube S 1 ~S 6 Control signal to switch tube S 1 ~S 6 grid; switch S 1 , S 2 The drains are connected to the power supply V G1 The positive connection of the switch tube S 3 ~S 5 The drains are connected to the power supply V G1 The negative pole of the power supply V G2 The negative pole of the connection is connected to ground; the switch tube S 6 The drain is connected to the supply V G2 The positive connection of the; and, the switching tube S 1 , S 3 The sources are respectively passed through the resistor R G1 Connected to the gate of the SiC MOSFET d...

Embodiment 2

[0075]Optimized on the basis of Example 1, the SiC MOSFET drive control circuit also includes a resistor R g , capacitance C gd 、C gs 、C ds , Diode D 1 ,Such as image 3 shown.

[0076] where the resistor R G1 , R G2 Respectively through the resistor R g It is connected to the gate of the SiC MOSFET device; the gate of the SiC MOSFET device is also connected to the capacitor C gd connected to its drain, and via capacitor C gs Connected to its source; the source and drain of the SiC MOSFET device are connected in parallel with a capacitor C ds , Diode D 1 .

[0077] Preferably, the SiC MOSFET drive control circuit also includes a diode D 2 , Inductance L. Such as Figure 4 shown. Among them, the drain of the SiC MOSFET device is connected through the parallel diode D 2 , The inductance L is connected to the positive input terminal of the load, and its source is connected to the negative input terminal of the load.

[0078] Preferably, the switching tube S that ...

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PUM

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Abstract

The invention relates to a SiC MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) driving control circuit with adjustable driving voltage and resistance, belongs to the technical field of SiC MOSFET driving, and solves the problem that high gain, simple structure, high stability and high efficiency are difficult to guarantee at the same time in the prior art. The converter comprises a control chip, a SiC MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device, power supplies VG1 to VG2, switching tubes S1 to S6 and resistors RG1 to RG2, wherein the control chip is used for outputting control signals of the switching tubes from S1 to S6 to grid electrodes of the switching tubes from S1 to S6; the drain electrodes of the switching tubes S1 and S2 are respectively connected with the positive electrode of the power supply VG1; drain electrodes of the switching tubes S3-S5 are respectively connected with a negative electrode of the power supply VG1 and a negative electrode of the power supply VG2 and are grounded; the drain electrode of the switch tube S6 is connected with the positive electrode of the power supply VG2; moreover, the source electrodes of the switching tubes S1 and S3 are respectively connected with the grid electrode of the SiC MOSFET device through a resistor RG1, and the source electrodes of the switching tubes S2 and S4 are respectively connected with the grid electrode of the SiC MOSFET device through a resistor RG2. And the source electrodes of the switching tubes S5 and S6 are connected with the source electrode of the SiC MOSFET device. The circuit can ensure safe and reliable operation of the SiC MOSFET device.

Description

technical field [0001] The invention relates to the technical field of SiC MOSFET drive control, in particular to a SiC MOSFET drive control circuit with adjustable drive voltage and resistance. Background technique [0002] With the rapid development of power electronics technology, SiC MOSFET devices emerged as the times require. It has the characteristics of high switching speed, low loss, high frequency of use, etc., and has a wide range of applications in the technical field of power electronic converters. [0003] At present, the source-drain output voltage / current change rate of the existing SiC MOSFET devices is relatively high, and the parasitic parameters will have a significant impact on its performance when the switching speed is low. limit. [0004] In view of the above problems, there are mainly two improvement methods in the prior art: one is to increase the gate resistance, and the other is to increase the gate voltage. However, the greater the gate resist...

Claims

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Application Information

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IPC IPC(8): H02M1/08
CPCH02M1/08Y02B70/10
Inventor 胡西红秦东东吴元元袁红升
Owner BEIJING MECHANICAL EQUIP INST
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